Cosme, I.; Kosarev, A.; Zarate-Galvez, S.; Martinez, H.E.; Mansurova, S.; Kudriavtsev, Y.
Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature. Materials 2020, 13, 1045.
https://doi.org/10.3390/ma13051045
AMA Style
Cosme I, Kosarev A, Zarate-Galvez S, Martinez HE, Mansurova S, Kudriavtsev Y.
Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature. Materials. 2020; 13(5):1045.
https://doi.org/10.3390/ma13051045
Chicago/Turabian Style
Cosme, Ismael, Andrey Kosarev, Saraà Zarate-Galvez, Hiram E. Martinez, Svetlana Mansurova, and Yuri Kudriavtsev.
2020. "Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature" Materials 13, no. 5: 1045.
https://doi.org/10.3390/ma13051045
APA Style
Cosme, I., Kosarev, A., Zarate-Galvez, S., Martinez, H. E., Mansurova, S., & Kudriavtsev, Y.
(2020). Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature. Materials, 13(5), 1045.
https://doi.org/10.3390/ma13051045