3. Results and Discussion
Figure 2 shows the dendritic structure of part h visualized on section P (
Figure 1b). The areas of different morphologies of the dendrite array are visible. In the first area marked as A (
Figure 2a,b) and located in the upper left fragment of the image, the most common morphology of the dendrite arm arrangement appears, represented by four-petal flowers-like shapes.
At some fragments of area A the dendrites are arranged in chains situated along the directions p and q of the secondary dendrites. The exemplary chains are marked in
Figure 2a,b as a
1–a
3 and b
1,b
2. The subarea that represents the continuer extension (CE) with a similar dendrite array also belongs to the area A. However, in the centre of the CE, where the selector extension (SE) subarea is located, the chains are less often observed.
The specific dendrite chain is visible in the left vertex of the area A (c
CE—
Figure 2a,b). In this area the dendrite chain morphology is different than the morphology of chain types a and b. Therefore, such morphology should be specified separately rather as the single secondary dendrite c
CE parallel to the q direction (
Figure 2b) from which the arms grow densely in the direction p, perpendicular to q. The distance between these arms is much smaller than that between the secondary dendrite arms parallel to the q direction, belonging to the chains a
1–a
3 type (
Figure 2b).
In area B, finer dendrites with smaller inter-dendritic distances occur compared to area A (
Figure 2b,c). Additionally, in the upper right fragment of the P microsection (
Figure 2c), the T area with a long dendrites c
1–c
3 similar to c
CE can be distinguished. These dendrites are almost parallel to the q direction. In the upper fragment of the T area, two long dendrites e
1 and e
2 almost parallel to the p direction are observed. The dendrite e
1 tangentially contacts the side surface of CB3 and CB2 at the points U
3 and U
2 (
Figure 2c), respectively, and at these points the direction changes. This dendrite belongs to both areas T and B. The dendrite e
2 is curved and contacts the surface of CB3 at point W. Its curvature is not related with a continuous change of a direction between the points H and W, but with a step change in the dendrite direction—resulting in the creation of several straight sections (
Figure 2c). The arm e
2 is related to the c
1–c
3 dendrites arranged perpendicular to it. As a result, the T area consists of the fan-like arrangement of the c
1–c
3 dendrites. The morphology of the dendrite array in the T area indicates a lateral growth of the e
1, e
2 and c
1–c
3 dendrites, perpendicular to the
Z axis of the root (
Figure 1a).
In area B the chains of the dendrites and single dendrites parallel to the p direction are visible. For both areas A and B, the chains and single dendrites in the direction p are more common than in the direction q.
The presence of the e
1, e
2 and c
1–c
3 type of dendrites in the T area suggests their lateral growth at the level of the cross-section P, above the plane of the continuer with the root connection (
Figure 1d). In area A, the phenomenon is rare and takes place, for example, for the arm c
CE only. As stated in Ref. [
11,
24], each of the dendrite chains of a
1–a
3 type, visible on the P surface, is the result of the growth of a set of tertiary dendrites in the Z direction from the laterally growing single secondary arm below the P surface which was named as the leading arm. In the SE subarea the dendrites grow directly from the selector (three double arrows,
Figure 1c), that is why the chains occur less often. The areas B and T usually have a finer dendritic structure than area A (
Figure 2c). It means that in areas B and T the local growth rate is higher. The long dendrite observed in the B and T areas grow laterally on the P surface. Such dendrites were not observed in area A. It means that in area A the dendritic structure was not created by the lateral growth. The analysis of the heterogeneity of the dendrite array of the upper surface of part h (surface P) shows that the crystallization is not steady over the entire surface P. The crystallization at the level of the P surface takes place by two mechanisms: the growth of the dendrites along the
Z axis and lateral growth in perpendicular directions lying on the P surface. At the level of the P surface in area A, the dendrite array morphology is the same as in the SE or CE subareas in which the dendrites growth has steady character. This means that the dendrites grow in this subarea under steady-state conditions too. However, in the T area the dendrites grew laterally. This means that the growth has an unsteady character. In the B area both types of growth occur. Therefore, it should be assumed that in this area the growth is also unsteady. It follows that the crystallization front is not parallel to the P surface and is curved.
The dendrite array of the h part of the root was additionally analysed by examining the longitudinal section of the plane Z
1X
1 (
Figure 1d,
Figure 3 and
Figure 4). The dendrite array was analyzed for the L1 and L2 fragments, separated by the cooling bore CB1 (
Figure 3). The L2 fragment is also marked in
Figure 2. The L1 fragment in
Figure 3 includes the subareas indicated from left to right as: C
CE, INT, CE, and L1
A. Generally, in the L1 fragment the vertical dendrites are visible, but in subarea C
CE an additional horizontal short dendrite—type c
CE—visible in
Figure 2a,b, can be observed. Close to the C
CE subarea in
Figure 3, the INT subarea with almost vertical dendrites—visualized as hourglasses—is visible. In the CE subarea, which is the continuer extension area, the dendrites visible as “hourglasses” “pass” through the entire thickness of the h part (e.g., T
1 and T
2 dendrites,
Figure 3). This means, that in the CE subarea, the dendrites grow in the Z direction in a steady condition over the entire thickness of part h. This growth does not occur for the INT subarea, and the number of dendrites at the lower surface of part h is higher than at its upper surface. The inter-dendritic distance at the upper surface of the INT subarea is similar to that in the whole CE subarea. On the right side of the CE area the L1
A subarea can be distinguished, the structure of which is generally similar to the structure of the CE subarea. The location of the L1
A subarea in part h is also shown in
Figure 1d. Furthermore, the subarea L1
A in
Figure 3 is related to area A in
Figure 2 and fragment L2 is generally related to area B (apart from the small L2 fragment located near the CB1 wall).
The structure of the dendrite array of the L1
A subarea near the upper (Z
1 = h) and lower (Z
1 = 0) surfaces is about the same (
Figure 4). However, near the lower surface of the L2 fragment the structure is different than near its upper surface. The dendritic structure near the upper surface, in the subareas marked as SGA
A and SGA
B (
Figure 4b,c), is similar to that in the CE subarea. This means, that in the SGA type subareas, the character of the dendrites’ crystallization is steady. In the two UGA
A and UGA
B subareas, marked in
Figure 4b,c, the distance d
UGA between the neighbouring dendrites is smaller than the distance d
SGA in the SGA subareas. This means that UGA type subareas were crystallized in an unsteady condition at higher rates than the SGA type subareas.
The dendritic structure near the lower surface (Z
1 = 0) for the L1
A subarea does not differ significantly from the structure near the upper surface (Z
1 = h). Since L1
A is the subarea of area A in
Figure 2a, it can be concluded that the entire area A near Z
1 = h crystallized at steady state conditions.
The dendritic structures of the L1
A, SGA and UGA type subareas allows to define the interdendritic distance. The interdendritic distance, described as the linear arms spacing (LAS), has been defined earlier in Ref. [
23]. The average value of the LAS was determined based on the scheme presenting the arrangement of the dendrite arms (
Figure 4c). In
Figure 4c, the almost vertical dendrite arms are presented as the numbered straight lines. In the case of the UGA, subareas’ dendrites are visualized as a straight lines starting at the bottom surface of the root, i.e., at the plane with the coordinate Z = 0. Therefore, determining the number of the dendrites and the LAS is quite simple and can be defined as the number of dendrites growing from the bottom surface.
However, the selection of the dendrites in the SGA type subareas or in the L1
A is difficult because in these subareas the dendrites are visualized in the form of “conifer” with the small horizontal branches or “hourglasses” (dendrite 3 and 4 from the SGA
B in the insert of
Figure 4c). In this case the criterion for selecting the dendrite lines was as follows: the lines pass, generally, through the axes of symmetry of the “hourglasses” or “conifers”. In the SGA type subareas the LAS, denoted in
Figure 4b,c as d
SGA, is evidently longer than in the UGA type subareas, e.g., d
SGA > d
UGA (
Figure 4). This type of relation between the LAS also results from the analysis of the data presented in
Table 1. The LAS of each area was calculated for dendrites numbered in
Figure 4b,c. It can be also observed that the LASs in the L1
A subarea are comparable in terms of margin of error to the LAS of SGA
A and the SGA
B subareas of the L2 fragment (
Table 1). Additionally, from
Figure 4c it may be observed that only some dendrites (double arrows—
Figure 4b,c) grow from the UGA to SGA subareas. This may be related to the effect of competitive growth of the dendrites. The upper fragments of the h part, denoted in
Figure 4c as the SGA
A and SGA
B represent area A shown in
Figure 2b, which is the area of steady dendrite growth. The lower UGA type subareas, described as the UGA
A and UGA
B, represent areas of unsteady dendrite growth.
Figure 5 shows the dendritic structure of the h part, visualized on the surface of the Z
2X
2 plane (
Figure 1d). It can be observed that a set of lateral dendrites grows from the lateral mould surface (LMS,
Figure 2c) in the direction marked by arrows as the R1 fragment in
Figure 5. Because the Z
2X
2 plane is parallel to the p direction (
Figure 2c) those dendrites are visualized on the
Figure 2 as the dendrites parallel to the p.
The R1 fragment can be divided into five subareas (
Figure 6): the lateral growth area LG, the unsteady growth subareas UGA1 and UGA2, the almost steady growth subarea ASGA and the interference subarea INT, where the images of vertically and horizontally growing dendrites overlap (
Figure 6a–c). The shapes of the subareas of unsteady dendrite growth are similar to those which were found in the L2 fragment (
Figure 4). The envelope of these areas has the shape of the curves with maxima (
Figure 6c). However, in the ASGA subarea, images of horizontally growing dendrites overlap the images of the dendrites growing vertically.
The LAS for the ASGA subarea is 0.32 mm (
Table 2). This value was determined for nine vertically growing dendrites marked in
Figure 6c. In the subareas UGA1 and UGA2, where the fine dendrites almost parallel to the
Z axis occur, the LASs for these dendrites are low and reaches about 0.12–0.14 mm (
Table 2). The LAS of the particular areas was calculated for the dendrites numbered in the
Figure 6b,c and
Figure 7b,c. In
Figure 6, on the left side of the INT subarea, the dendrites are located almost horizontally and lie partially on the plane of the surface of the R1 fragment. In the INT subarea, as a result of the horizontal and vertical arm interference, the dendritic structure contains both short horizontal and vertical dendrite fragments. The dendrites of the LG subarea visible in the
Figure 6 are also presented in
Figure 2 as a dendrite parallel to the p direction.
The linear arm spacing of the dendrites in the UGA1, UGA2 and UGA3 subareas of the R1 and R2 fragments and the ASGA subarea of the R1 fragment are presented in
Table 2. For all of the UGA type subareas of the R2 fragment, the LAS varied from 0.12 to 0.18 mm. For the ASGA subarea, the LAS value was significantly higher (0.32 mm,
Table 2). In the subarea ASGA of the R1 fragment (
Figure 6), specific competition between the almost vertically and almost horizontally growing dendrites occurs. A similar phenomenon also occurs in the area T of the R2 fragment (
Figure 7c). However, for this area, the LAS of vertically growing dendrites (
Table 2) was not determined because almost all dendrites grow horizontally. However, the single dendrites marked in
Figure 7b by the double arrows, grow from the bottom surface of the mould to the top surface of part h.
Inside the subarea ASGA of the R1 fragment, specific competitive-like growth occurs. The almost horizontal arms growing from the lateral mould surface (LMS), the arms growing from the lateral cooling bore surfaces (CBS,
Figure 6b,c) and the almost vertical dendrites growing from the almost horizontal leading secondary dendrites (not visible in
Figure 6 and
Figure 7)—localized near the bottom surface of the casting mould—are visible in the
Figure 6. The subareas UGA1 and UGA2 consist of a group of very tightly arranged short dendrites. The shape of the subareas is complex and limited by the envelope with a maximum. Similar subareas are also found in the R2 fragment (
Figure 7). In Ref. [
11,
24], it was stated that each group of the dendrites of UGA type subarea is created by the tertiary dendrites that grow almost parallel to the
Z axis from a single secondary dendrite growing laterally near the bottom surface of the root.
The reasons for the creation of the groups of fine tertiary dendrites may be explained as follows. Each group can grow from the single secondary dendrite growing almost parallel to the X
1 axis (
Figure 8). Such a secondary dendrite can be said to be leading. When the leading dendrite approaches the bottom surface of the root (plane Z = 0,
Figure 8), the rapid growth of the densely arranged tertiary arms occurs. A similar phenomenon was described in Ref. [
25]. According to this phenomenon, thin secondary dendrites grew in the group of small spacing near the bottom surface of the mould. Due to the fact that the bottom surface of the mould may be achieved by the several leading dendrites (for example, dendrite 1 and 2;
Figure 8), several groups of fine tertiary dendrites are created near point A and B of the bottom surface. In addition, due to the fact that the surface of the longitudinal section R was similar to the directions of the secondary dendrites, the growth of the tertiary dendrites could be observed in the R section.
Since the lateral growth rate is an order higher than the withdrawal rate of the root out from the heating area of the Bridgman furnace [
25], the growth takes place as if the removing the root from the heating area was “frozen”. It means, that the tertiary dendrites can grow temporarily not only in the +Z direction but additionally in the opposite (−Z) direction (
Figure 8). However, since the value is small, the dendrites growing in the −Z direction will be very short. This can be seen that in some areas of the root near, the casting mould surface (
Figure 8b). The growth of the tertiary dendrites stops at points A and B because the growth of the leading secondary dendrites stops. Near points A and B, the growth of the dendrites in the −Z direction stops, while in the +Z direction it intensifies. As a result, sets of longer tertiary dendrites are formed near points A and B, limited by the envelopes with local maxima. Such the sets of the dendrites are visible in the UGA1, UGA2 and UGA3 subareas in
Figure 6 and
Figure 7 or in the UGA
A or UGA
B in
Figure 4.
The heterogeneity of the dendritic structure of the h part may be related to the local changes in the crystal orientation of the dendrites. Since the dendritic structure of the P surface is finer for the B and T areas compared to area A (
Figure 2), it can be concluded, that the growth rate of the dendrites in the areas B and T is higher compared to area A. In areas B and T, the dendrites’ growth is affected by the lateral mould surfaces and surfaces of the ceramic cores of casting mould may occur. The accelerated process of dendrite growth occurs in the UGA type subareas (
Figure 4,
Figure 6 and
Figure 7) which are areas of unsteady longitudinal almost-vertical growth. In the SGA type subareas (
Figure 4) and in the almost whole upper surface of the L1 fragment (
Figure 3) the process of dendrite growth almost vertical in the Z direction takes place in the steady-state regime. However, in area T, far from the selector extension area, the dendritic growth has an unsteady and almost lateral character.
In the L2 and R1 fragments (
Figure 4 and
Figure 6), local heat dissipation through the ceramic cores placed in the CB1–CB3 bores, play a fundamental role in the local increase in the dendrite growth rate during the initial stage of crystallization. The R2 is the fragment with a structure that suggest the fast-crystallizing, which may lead to the formation of the subgrains of high crystal misorientation.
To verify the above considerations, the X-ray diffraction topograms from the entire P surface were obtained.
Figure 9 shows such topograms, obtained using the 002 and 113 Cu
Kα reflection. In the topograms, the areas of lacking contrast correspond to the cooling bores CB1—CB3 and areas of increased and decreased contrast in the shape of bands are visible. The B
1–B
3 contrast bands that are shifted relative to the rest parts of topograms, may be observed for area T of the P surface. It means that in these areas of the high misoriented subgrain of, a band-shape exists. The direction of these bands is consistent with the direction of the q dendrites visible in
Figure 2.
The shape of the outline of the topograms differs from the shape of the outline of the P plane from which it was obtained. The differences result from the diffraction geometry, i.e., from the slope of the diffraction beam and the (002) and (113) diffraction planes, relative to the studied surface. The shifted bands of B1–B3 areas are present near the cooling bores CB2 and CB3. The bands of lacking contrast between the shifted fragments of the topograms represent the low-angle boundary (LAB).
In addition to the areas of lacking contrast related to the local shifts in the topograms, the regions A
3, SS and FF are visible. These regions are formed when the Bragg condition is not satisfied [
20] and there is no X-ray reflection. The location of the A
3 area on the topogram corresponds to the location of the a
3 dendrite chains on the P surface (
Figure 2a,b). This means that all dendrites of the chains are highly disoriented with the rest of the dendrites. The leading secondary dendrite, from which the chain of the dendrites grew, was probably accidentally rotated by a fairly large angle. The location of the SS area (lack of contrast) corresponds to the right lower fragment of area T on the P surface (
Figure 2a,c). The image of the dendritic structure in this area shows the c
1–c
3 dendrites growing laterally from the lateral mould surface. The crystal misorientation of this area is so large that the Bragg condition is not satisfied, and X-ray beam reflection does not occur. The contrast bands B
1 and B
2 in the topogram correspond to the chains of the dendrites similar to b
1 (
Figure 2c). Band B
3 corresponds to the side branches of the dendrites parallel to b
1, growing from the dendrite e
1 or e
2. The lack of contrast for the area FF is a result of the absence of proper Bragg conditions for reflection 113 corresponding to this area. Details on how the X-ray diffraction topograms were obtained and ineterpreted are described in Ref. [
26].
The above-mentioned shifts of B
1–B
3 areas in the topogram indicating the crystal misorientation, most often occur near the cooling bores or near the surface of the mould. The local heat transfer is faster towards the mould wall and could be the reason for the rapid growth of the dendrites parallel to the heat dissipation direction. The high rate of growth is the cause of the crystal misorientation. The CE subarea on the topogram from
Figure 9a has a uniform contrast that suggests no misorientation defects.
The growth of the dendrite is often limited and changed by the mould walls, resulting in the bending of the dendrites [
10,
12,
27,
28,
29]. The bending is observed in the areas localized near the mould surface or in the areas where the step change geometry of cast occurs, for example in the root near the continuer-root connection.
The selector location on the transverse section of the root has a significant influence on the dendrites growth and the dendritic array of the blades. In the studied root of the turbine blade, the selector was located asymmetrically relative to the centre of the root transverse-section and shifted towards the edge of the blade (
Figure 1c). The continuer extension (CE) subarea of the root is free of the essential defects of the misorientation character or heterogeneity of the dendrite array that appear in the other areas of the root. The highest concentration of defects, especially subgrains, appears a long distance away from the continuer extension (CE) subarea. There are a few reasons for the formation of the dendrite array heterogeneity at the initial stage of the crystallization in the root (i.e., in part P) of the cored SX-blades.
The first reason is the strongly asymmetrical location of the selector and continuer (
Figure 1b). The second is related to the location of the mould on the chill-plate and the mould dimensions in comparison to the diameter of the chill-plate. Due to the relatively small diameter of the chill-plate (D
CP = 20 cm) in relation to the
l size (
l = 60 mm) of the root, the casting mould was located on the chill-plate in a such way that the longer edge of the root (edge with length
l) is not aligned with the radius R but with the tangent to the circumference of the chill-plate (
Figure 1c). This probably caused significant heterogeneity of the temperature distribution in the cast. The additional negative aspect is that the ceramic cores of the cooling bores pass through the whole mould and connect to the bottom surface of the casting mould. As a result, the cores were an obstacle to the lateral growth of the dendrites in the initial stage of crystallization, during the transition of the crystallization front from the continuer to the root. To prevent the formation of the dendrite array heterogeneity, the single-crystalline cast of the blades must include the root fragment h*, which should not contain the cooling bores (
Figure 10). This fragment would allow for unsteady and fast undisturbed lateral growth of the dendrites from the continuer extension (CE) area to the other areas of the root. This fragment should be cut off in the next stages of blade production. As a result, fewer defects will be generated in the h* fragment (
Figure 10) and inherited by the areas of the cast that crystallize later (the root and the airfoil). Additionally, the continuer should be placed in the middle of the cross-section of the root. This will reduce the distance
n (
Figure 10) in which rapid lateral growth occurs, and will reduce the number of defects in the h* fragment. The thickness of h* must be greater than or equal to the fragment of unsteady growth with the thickness h which was about 5 mm for the tested casts.