Article Versions Notes

Jiao T, Chen W, Li Z, Diao Z, Dang X, Chen P, Dong X, Zhang Y, Zhang B. Fabrication of Ga₂O₃ Schottky Barrier Diode and Heterojunction Diode by MOCVD. Materials. 2022; 15(23):8280. https://doi.org/10.3390/ma15238280

Jiao, Teng, Wei Chen, Zhengda Li, Zhaoti Diao, Xinming Dang, Peiran Chen, Xin Dong, Yuantao Zhang, and Baolin Zhang. 2022. "Fabrication of Ga₂O₃ Schottky Barrier Diode and Heterojunction Diode by MOCVD" Materials 15, no. 23: 8280. https://doi.org/10.3390/ma15238280

Jiao, T., Chen, W., Li, Z., Diao, Z., Dang, X., Chen, P., Dong, X., Zhang, Y., & Zhang, B. (2022). Fabrication of Ga₂O₃ Schottky Barrier Diode and Heterojunction Diode by MOCVD. Materials, 15(23), 8280. https://doi.org/10.3390/ma15238280