Bature, U.I.; Nawi, I.M.; Khir, M.H.M.; Zahoor, F.; Algamili, A.S.; Hashwan, S.S.B.; Zakariya, M.A.
Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices. Materials 2022, 15, 1205.
https://doi.org/10.3390/ma15031205
AMA Style
Bature UI, Nawi IM, Khir MHM, Zahoor F, Algamili AS, Hashwan SSB, Zakariya MA.
Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices. Materials. 2022; 15(3):1205.
https://doi.org/10.3390/ma15031205
Chicago/Turabian Style
Bature, Usman Isyaku, Illani Mohd Nawi, Mohd Haris Md Khir, Furqan Zahoor, Abdullah Saleh Algamili, Saeed S. Ba Hashwan, and Mohd Azman Zakariya.
2022. "Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices" Materials 15, no. 3: 1205.
https://doi.org/10.3390/ma15031205
APA Style
Bature, U. I., Nawi, I. M., Khir, M. H. M., Zahoor, F., Algamili, A. S., Hashwan, S. S. B., & Zakariya, M. A.
(2022). Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices. Materials, 15(3), 1205.
https://doi.org/10.3390/ma15031205