Lam, K.-Y.; Huang, J.-S.; Zou, Y.-J.; Lee, K.-W.; Wang, Y.-H.
Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric. Materials 2016, 9, 861.
https://doi.org/10.3390/ma9110861
AMA Style
Lam K-Y, Huang J-S, Zou Y-J, Lee K-W, Wang Y-H.
Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric. Materials. 2016; 9(11):861.
https://doi.org/10.3390/ma9110861
Chicago/Turabian Style
Lam, Kai-Yuen, Jung-Sheng Huang, Yong-Jie Zou, Kuan-Wei Lee, and Yeong-Her Wang.
2016. "Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric" Materials 9, no. 11: 861.
https://doi.org/10.3390/ma9110861
APA Style
Lam, K. -Y., Huang, J. -S., Zou, Y. -J., Lee, K. -W., & Wang, Y. -H.
(2016). Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric. Materials, 9(11), 861.
https://doi.org/10.3390/ma9110861