Duan, X.; Zhang, J.; Chen, J.; Zhang, T.; Zhu, J.; Lin, Z.; Hao, Y.
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor. Micromachines 2019, 10, 75.
https://doi.org/10.3390/mi10010075
AMA Style
Duan X, Zhang J, Chen J, Zhang T, Zhu J, Lin Z, Hao Y.
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor. Micromachines. 2019; 10(1):75.
https://doi.org/10.3390/mi10010075
Chicago/Turabian Style
Duan, Xiaoling, Jincheng Zhang, Jiabo Chen, Tao Zhang, Jiaduo Zhu, Zhiyu Lin, and Yue Hao.
2019. "High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor" Micromachines 10, no. 1: 75.
https://doi.org/10.3390/mi10010075
APA Style
Duan, X., Zhang, J., Chen, J., Zhang, T., Zhu, J., Lin, Z., & Hao, Y.
(2019). High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor. Micromachines, 10(1), 75.
https://doi.org/10.3390/mi10010075