Kang, H.; Seo, J.; Kim, H.; Kim, H.W.; Hong, E.R.; Kim, N.; Lee, D.; Woo, J.
Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review. Micromachines 2022, 13, 453.
https://doi.org/10.3390/mi13030453
AMA Style
Kang H, Seo J, Kim H, Kim HW, Hong ER, Kim N, Lee D, Woo J.
Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review. Micromachines. 2022; 13(3):453.
https://doi.org/10.3390/mi13030453
Chicago/Turabian Style
Kang, Heebum, Jongseon Seo, Hyejin Kim, Hyun Wook Kim, Eun Ryeong Hong, Nayeon Kim, Daeseok Lee, and Jiyong Woo.
2022. "Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review" Micromachines 13, no. 3: 453.
https://doi.org/10.3390/mi13030453
APA Style
Kang, H., Seo, J., Kim, H., Kim, H. W., Hong, E. R., Kim, N., Lee, D., & Woo, J.
(2022). Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review. Micromachines, 13(3), 453.
https://doi.org/10.3390/mi13030453
