Yamaguchi, T.; Sasaki, T.; Fujikawa, S.; Takahasi, M.; Araki, T.; Onuma, T.; Honda, T.; Nanishi, Y.
In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN. Crystals 2019, 9, 631.
https://doi.org/10.3390/cryst9120631
AMA Style
Yamaguchi T, Sasaki T, Fujikawa S, Takahasi M, Araki T, Onuma T, Honda T, Nanishi Y.
In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN. Crystals. 2019; 9(12):631.
https://doi.org/10.3390/cryst9120631
Chicago/Turabian Style
Yamaguchi, Tomohiro, Takuo Sasaki, Seiji Fujikawa, Masamitu Takahasi, Tsutomu Araki, Takeyoshi Onuma, Tohru Honda, and Yasushi Nanishi.
2019. "In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN" Crystals 9, no. 12: 631.
https://doi.org/10.3390/cryst9120631
APA Style
Yamaguchi, T., Sasaki, T., Fujikawa, S., Takahasi, M., Araki, T., Onuma, T., Honda, T., & Nanishi, Y.
(2019). In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN. Crystals, 9(12), 631.
https://doi.org/10.3390/cryst9120631