Article Versions Notes

Ene VL, Dinescu D, Djourelov N, Zai I, Vasile BS, Serban AB, Leca V, Andronescu E. Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments. Nanomaterials. 2020; 10(2):197. https://doi.org/10.3390/nano10020197

Ene, Vladimir Lucian, Doru Dinescu, Nikolay Djourelov, Iulia Zai, Bogdan Stefan Vasile, Andreea Bianca Serban, Victor Leca, and Ecaterina Andronescu. 2020. "Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments" Nanomaterials 10, no. 2: 197. https://doi.org/10.3390/nano10020197

Ene, V. L., Dinescu, D., Djourelov, N., Zai, I., Vasile, B. S., Serban, A. B., Leca, V., & Andronescu, E. (2020). Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments. Nanomaterials, 10(2), 197. https://doi.org/10.3390/nano10020197