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Mballo A, Srivastava A, Sundaram S, Vuong P, Karrakchou S, Halfaya Y, Gautier S, Voss PL, Ahaitouf A, Salvestrini JP, et al. Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions. Nanomaterials. 2021; 11(1):211. https://doi.org/10.3390/nano11010211

Mballo, Adama, Ashutosh Srivastava, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Yacine Halfaya, Simon Gautier, Paul L. Voss, Ali Ahaitouf, Jean Paul Salvestrini, and et al. 2021. "Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions" Nanomaterials 11, no. 1: 211. https://doi.org/10.3390/nano11010211

Mballo, A., Srivastava, A., Sundaram, S., Vuong, P., Karrakchou, S., Halfaya, Y., Gautier, S., Voss, P. L., Ahaitouf, A., Salvestrini, J. P., & Ougazzaden, A. (2021). Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions. Nanomaterials, 11(1), 211. https://doi.org/10.3390/nano11010211