Babin, H.G.; Ritzmann, J.; Bart, N.; Schmidt, M.; Kruck, T.; Zhai, L.; Löbl, M.C.; Nguyen, G.N.; Spinnler, C.; Ranasinghe, L.;
et al. Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode. Nanomaterials 2021, 11, 2703.
https://doi.org/10.3390/nano11102703
AMA Style
Babin HG, Ritzmann J, Bart N, Schmidt M, Kruck T, Zhai L, Löbl MC, Nguyen GN, Spinnler C, Ranasinghe L,
et al. Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode. Nanomaterials. 2021; 11(10):2703.
https://doi.org/10.3390/nano11102703
Chicago/Turabian Style
Babin, Hans Georg, Julian Ritzmann, Nikolai Bart, Marcel Schmidt, Timo Kruck, Liang Zhai, Matthias C. Löbl, Giang N. Nguyen, Clemens Spinnler, Leonardo Ranasinghe,
and et al. 2021. "Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode" Nanomaterials 11, no. 10: 2703.
https://doi.org/10.3390/nano11102703
APA Style
Babin, H. G., Ritzmann, J., Bart, N., Schmidt, M., Kruck, T., Zhai, L., Löbl, M. C., Nguyen, G. N., Spinnler, C., Ranasinghe, L., Warburton, R. J., Heyn, C., Wieck, A. D., & Ludwig, A.
(2021). Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode. Nanomaterials, 11(10), 2703.
https://doi.org/10.3390/nano11102703