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Endoh N, Akiyama S, Tashima K, Suwa K, Kamogawa T, Kohama R, Funakubo K, Konishi S, Mogi H, Kawahara M, et al. High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications. Nanomaterials. 2021; 11(2):392. https://doi.org/10.3390/nano11020392

Endoh, Norifumi, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo, Shigeru Konishi, Hiroshi Mogi, Minoru Kawahara, and et al. 2021. "High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications" Nanomaterials 11, no. 2: 392. https://doi.org/10.3390/nano11020392

Endoh, N., Akiyama, S., Tashima, K., Suwa, K., Kamogawa, T., Kohama, R., Funakubo, K., Konishi, S., Mogi, H., Kawahara, M., Kawai, M., Kubota, Y., Ohkochi, T., Kotsugi, M., Horiba, K., Kumigashira, H., Suemitsu, M., Watanabe, I., & Fukidome, H. (2021). High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications. Nanomaterials, 11(2), 392. https://doi.org/10.3390/nano11020392