Article Versions Notes

Li Y, Zhu H, Kong Z, Zhang Y, Ai X, Wang G, Wang Q, Liu Z, Lu S, Xie L, et al. The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids. Nanomaterials. 2021; 11(5):1209. https://doi.org/10.3390/nano11051209

Li, Yangyang, Huilong Zhu, Zhenzhen Kong, Yongkui Zhang, Xuezheng Ai, Guilei Wang, Qi Wang, Ziyi Liu, Shunshun Lu, Lu Xie, and et al. 2021. "The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids" Nanomaterials 11, no. 5: 1209. https://doi.org/10.3390/nano11051209

Li, Y., Zhu, H., Kong, Z., Zhang, Y., Ai, X., Wang, G., Wang, Q., Liu, Z., Lu, S., Xie, L., Huang, W., Liu, Y., Li, C., Li, J., Lin, H., Su, J., Zeng, C., & Radamson, H. H. (2021). The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids. Nanomaterials, 11(5), 1209. https://doi.org/10.3390/nano11051209