Hsieh, H.-Y.; Liou, P.-W.; Yang, S.; Chen, W.-C.; Liang, L.-P.; Lee, Y.-C.; Yang, C.-C.
Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis. Nanomaterials 2023, 13, 1617.
https://doi.org/10.3390/nano13101617
AMA Style
Hsieh H-Y, Liou P-W, Yang S, Chen W-C, Liang L-P, Lee Y-C, Yang C-C.
Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis. Nanomaterials. 2023; 13(10):1617.
https://doi.org/10.3390/nano13101617
Chicago/Turabian Style
Hsieh, Hao-Yu, Ping-Wei Liou, Shaobo Yang, Wei-Cheng Chen, Li-Ping Liang, Yueh-Chi Lee, and Chih-Chung (C. C.) Yang.
2023. "Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis" Nanomaterials 13, no. 10: 1617.
https://doi.org/10.3390/nano13101617
APA Style
Hsieh, H. -Y., Liou, P. -W., Yang, S., Chen, W. -C., Liang, L. -P., Lee, Y. -C., & Yang, C. -C.
(2023). Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis. Nanomaterials, 13(10), 1617.
https://doi.org/10.3390/nano13101617
