Chen, J.; Wu, G.; Ding, Y.; Chen, Q.; Gao, W.; Zhang, T.; Jing, X.; Lin, H.; Xue, F.; Tao, L.
Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability. Nanomaterials 2023, 13, 2056.
https://doi.org/10.3390/nano13142056
AMA Style
Chen J, Wu G, Ding Y, Chen Q, Gao W, Zhang T, Jing X, Lin H, Xue F, Tao L.
Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability. Nanomaterials. 2023; 13(14):2056.
https://doi.org/10.3390/nano13142056
Chicago/Turabian Style
Chen, Jiayi, Guodong Wu, Yamei Ding, Qichao Chen, Wenya Gao, Tuo Zhang, Xu Jing, Huiwen Lin, Feng Xue, and Li Tao.
2023. "Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability" Nanomaterials 13, no. 14: 2056.
https://doi.org/10.3390/nano13142056
APA Style
Chen, J., Wu, G., Ding, Y., Chen, Q., Gao, W., Zhang, T., Jing, X., Lin, H., Xue, F., & Tao, L.
(2023). Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability. Nanomaterials, 13(14), 2056.
https://doi.org/10.3390/nano13142056