Article Versions Notes

Liu E, Li J, Zhou N, Chen R, Shao H, Gao J, Zhang Q, Kong Z, Lin H, Zhang C, et al. Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process. Nanomaterials. 2023; 13(14):2127. https://doi.org/10.3390/nano13142127

Liu, Enxu, Junjie Li, Na Zhou, Rui Chen, Hua Shao, Jianfeng Gao, Qingzhu Zhang, Zhenzhen Kong, Hongxiao Lin, Chenchen Zhang, and et al. 2023. "Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process" Nanomaterials 13, no. 14: 2127. https://doi.org/10.3390/nano13142127

Liu, E., Li, J., Zhou, N., Chen, R., Shao, H., Gao, J., Zhang, Q., Kong, Z., Lin, H., Zhang, C., Lai, P., Yang, C., Liu, Y., Wang, G., Zhao, C., Yang, T., Yin, H., Li, J., Luo, J., & Wang, W. (2023). Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process. Nanomaterials, 13(14), 2127. https://doi.org/10.3390/nano13142127