Article Versions Notes

Deng C, Wang P, Tang C, Hu Q, Du F, Jiang Y, Zhang Y, Li M, Xiong Z, Wang X, et al. Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique. Nanomaterials. 2024; 14(18):1471. https://doi.org/10.3390/nano14181471

Deng, Chenkai, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, and et al. 2024. "Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique" Nanomaterials 14, no. 18: 1471. https://doi.org/10.3390/nano14181471

Deng, C., Wang, P., Tang, C., Hu, Q., Du, F., Jiang, Y., Zhang, Y., Li, M., Xiong, Z., Wang, X., Wen, K., Li, W., Tao, N., Wang, Q., & Yu, H. (2024). Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique. Nanomaterials, 14(18), 1471. https://doi.org/10.3390/nano14181471