Order Article Reprints

Xie X, Wang Q, Pan M, Zhang P, Wang L, Yang Y, Huang H, Hu X, Xu M. Improved V_th Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O₂ Plasma Treatment. Nanomaterials. 2024; 14(6):523. https://doi.org/10.3390/nano14060523

Xie, Xinling, Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Hai Huang, Xin Hu, and Min Xu. 2024. "Improved V_th Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O₂ Plasma Treatment" Nanomaterials 14, no. 6: 523. https://doi.org/10.3390/nano14060523

Xie, X., Wang, Q., Pan, M., Zhang, P., Wang, L., Yang, Y., Huang, H., Hu, X., & Xu, M. (2024). Improved V_th Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O₂ Plasma Treatment. Nanomaterials, 14(6), 523. https://doi.org/10.3390/nano14060523