Liu, Y.-H.; Kao, C.-H.; Cheng, T.-C.; Wu, C.-I.; Wang, J.-C.
Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer. Nanomaterials 2017, 7, 385.
https://doi.org/10.3390/nano7110385
AMA Style
Liu Y-H, Kao C-H, Cheng T-C, Wu C-I, Wang J-C.
Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer. Nanomaterials. 2017; 7(11):385.
https://doi.org/10.3390/nano7110385
Chicago/Turabian Style
Liu, Yu-Hua, Chyuan-Haur Kao, Tsung-Chin Cheng, Chih-I Wu, and Jer-Chyi Wang.
2017. "Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer" Nanomaterials 7, no. 11: 385.
https://doi.org/10.3390/nano7110385
APA Style
Liu, Y. -H., Kao, C. -H., Cheng, T. -C., Wu, C. -I., & Wang, J. -C.
(2017). Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer. Nanomaterials, 7(11), 385.
https://doi.org/10.3390/nano7110385