Lee, M.; Vu, T.K.O.; Lee, K.S.; Kim, E.K.; Park, S.
Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation. Nanomaterials 2018, 8, 397.
https://doi.org/10.3390/nano8060397
AMA Style
Lee M, Vu TKO, Lee KS, Kim EK, Park S.
Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation. Nanomaterials. 2018; 8(6):397.
https://doi.org/10.3390/nano8060397
Chicago/Turabian Style
Lee, Moonsang, Thi Kim Oanh Vu, Kyoung Su Lee, Eun Kyu Kim, and Sungsoo Park.
2018. "Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation" Nanomaterials 8, no. 6: 397.
https://doi.org/10.3390/nano8060397
APA Style
Lee, M., Vu, T. K. O., Lee, K. S., Kim, E. K., & Park, S.
(2018). Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation. Nanomaterials, 8(6), 397.
https://doi.org/10.3390/nano8060397