Caruso, E.; Esseni, D.; Gnani, E.; Lizzit, D.; Palestri, P.; Pin, A.; Puglisi, F.M.; Selmi, L.; Zagni, N.
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach. Electronics 2021, 10, 2472.
https://doi.org/10.3390/electronics10202472
AMA Style
Caruso E, Esseni D, Gnani E, Lizzit D, Palestri P, Pin A, Puglisi FM, Selmi L, Zagni N.
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach. Electronics. 2021; 10(20):2472.
https://doi.org/10.3390/electronics10202472
Chicago/Turabian Style
Caruso, Enrico, David Esseni, Elena Gnani, Daniel Lizzit, Pierpaolo Palestri, Alessandro Pin, Francesco Maria Puglisi, Luca Selmi, and Nicolò Zagni.
2021. "Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach" Electronics 10, no. 20: 2472.
https://doi.org/10.3390/electronics10202472
APA Style
Caruso, E., Esseni, D., Gnani, E., Lizzit, D., Palestri, P., Pin, A., Puglisi, F. M., Selmi, L., & Zagni, N.
(2021). Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach. Electronics, 10(20), 2472.
https://doi.org/10.3390/electronics10202472