Thermoelectric Properties of Ceramic-Based Materials

A special issue of Ceramics (ISSN 2571-6131).

Deadline for manuscript submissions: closed (15 May 2023) | Viewed by 3641

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Guest Editor
Department of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of Korea
Interests: thermoelectric; 2D materials; chalcogenides
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Special Issue Information

Dear Colleagues,

Thermoelectric materials can generate electrical energy from temperature gradients, or temperature gradients from electrical energy. In recent years, the thermoelectric performance of materials, which is evaluated with the dimensionless figure of merit (zT), has been improved. This Special Issue is dedicated to recent advances in the characterization of the thermoelectric properties of ceramic-based materials regarding both electronic and thermal transport properties. The development of the microstructure, composition, and synthesis of ceramic-based thermoelectrics, as well as the investigation of the composition–property relationship, open new opportunities to search for new ceramic-based thermoelectric materials. This Special Issue will present the most recent developments in the field of ceramic-based thermoelectric materials. Studies on thermoelectric-related properties, including the electronic and thermal transport properties of ceramic-based materials, are welcome, including original articles, communications, and reviews.

Dr. Sang-il Kim
Guest Editor

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Keywords

  • thermoelectric materials
  • electronic transport properties
  • thermal transport properties
  • oxides
  • chalcogenides

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Published Papers (2 papers)

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Research

10 pages, 1634 KiB  
Article
Characterization of Bipolar Transport in Hf(Te1−xSex)2 Thermoelectric Alloys
by Seong-Mee Hwang, Sang-il Kim, Jeong-Yeon Kim, Minsu Heo and Hyun-Sik Kim
Ceramics 2023, 6(1), 538-547; https://doi.org/10.3390/ceramics6010032 - 17 Feb 2023
Viewed by 1703
Abstract
Control of bipolar conduction is essential to improve the high-temperature thermoelectric performance of materials for power generation applications. Recently, Hf(Te1−xSex)2 alloys have gained much attention due to their potential use in thermoelectric power generation. Increasing the Se [...] Read more.
Control of bipolar conduction is essential to improve the high-temperature thermoelectric performance of materials for power generation applications. Recently, Hf(Te1−xSex)2 alloys have gained much attention due to their potential use in thermoelectric power generation. Increasing the Se alloying content significantly increases the band gap while decreasing its carrier concentration. These two factors affect bipolar conduction substantially. In addition, the weighted mobility ratio is estimated from the experimental electronic transport properties of Hf(Te1−xSex)2 alloys (x = 0.0, 0.025, 0.25, 0.5, 1.0) by using the Two-Band model. From the bipolar thermal conductivity also calculated using the Two-Band model, we find that it peaks near x = 0.5. The initial bipolar conductivity increase of x < 0.5 is mostly due to the decrease in the weighted mobility ratio and carrier concentration with increasing x. For x > 0.5, the drop in the bipolar conductivity can be understood with significant band gap enlargement. Full article
(This article belongs to the Special Issue Thermoelectric Properties of Ceramic-Based Materials)
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10 pages, 1899 KiB  
Article
Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance
by Hyunjin Park, Sang-il Kim, Jeong-Yeon Kim, Seong-Mee Hwang and Hyun-Sik Kim
Ceramics 2023, 6(1), 504-513; https://doi.org/10.3390/ceramics6010029 - 13 Feb 2023
Cited by 9 | Viewed by 1539
Abstract
Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn1−xBixSe (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band [...] Read more.
Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn1−xBixSe (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band model. Bi doping suppresses the carrier-phonon coupling while increasing the density-of-states effective mass. The n-type SnSe is known to have two conduction bands converge near 600 K. Bi doping changes the temperature at which the band convergence occurs. When x = 0.04, its weighted mobility maximized near 500 K, which indicated the possible band convergence. The highest zT of the x = 0.04 sample at mid-temperatures (473–573 K) can be attributed to the engineered band convergence via Bi doping. Full article
(This article belongs to the Special Issue Thermoelectric Properties of Ceramic-Based Materials)
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