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Crystals
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Research Progress of Perovskite Ferroelectric Materials
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Research Progress of Perovskite Ferroelectric Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (15 August 2023) | Viewed by 12194

Special Issue Editors

Dr. Karuna Kara Mishra

E-Mail Website
Guest Editor
Department of Physics, Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA
Interests: ferroelectrics; thin films; bulk; energy storage; pulsed laser deposition; phonon; DAC based high pressure
Dr. Venkata Sreenivas Puli

E-Mail Website
Guest Editor
National Research Council, Washington, DC 20001, USA
Interests: ferroelectrics; multiferroics; multicaloric materials, oixde based high energy density capacitor, scanning probe microscopy
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Ferroelectrics exhibit spontaneous polarization that can be switched with an applied electric field. Polarization switching in ferroelectrics is associated with a hysteresis, which is often observed in non-centrosymmetric crystals. Perovskite ABO3 type ferroelectrics are technologically robust ferroelectric materials, whose ferroelectric properties are controlled systematically by a suitable substitution of the cations (acceptor and/or donor dopant) on the A-site and/or B-site in order to innovate materials with improved ferroelectric properties, resulting from strengthening the domain wall mobility and the enhancement of electronic properties. This Special Issue seeks to highlight the role of perovskite (in bulk and in thin films) on crucial ferroelectric properties and to showcase cutting-edge work and applications involving different ferroelectric ordering (ferroelectric, anti-ferroelectric, relaxor ferroelectric etc.).

Dr. Karuna Kara Mishra
Dr. Venkata Sreenivas Puli
Guest Editors

Manuscript Submission Information

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Published Papers (7 papers)

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Research

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16 pages, 4690 KiB  
Article
Phase Transitions under the Electric Field in Ternary Ferroelectric Solid Solutions of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 near the Morphotropic Phase Boundary: Electric Approach
by Makoto Iwata, Soma Suzuki, Yoshinori Takikawa, Keiichiro Nakamura and Kazuhiko Echizenya
Crystals 2024, 14(2), 121; https://doi.org/10.3390/cryst14020121 - 26 Jan 2024
Cited by 1 | Viewed by 1145
Abstract
Temperature–field phase diagrams in the [001]c and [011]c directions in the cubic coordinate in 24%Pb(In1/2Nb1/2)O3–46%Pb(Mg1/3Nb2/3)O3–30%PbTiO3 (24PIN–46PMN–30PT) and 31PIN–43PMN–26PT near the morphotropic phase boundary have been clarified by measuring [...] Read more.
Temperature–field phase diagrams in the [001]c and [011]c directions in the cubic coordinate in 24%Pb(In1/2Nb1/2)O3–46%Pb(Mg1/3Nb2/3)O3–30%PbTiO3 (24PIN–46PMN–30PT) and 31PIN–43PMN–26PT near the morphotropic phase boundary have been clarified by measuring the temperature dependences of permittivity under an electric field. Field-induced intermediate orthorhombic and tetragonal phases have been newly found in 24PIN–46PMN–30PT and 31PIN–43PMN–26PT, respectively. The temperature dependences of the remanent polarization have also been determined by polarization–electric field (P–E) hysteresis loop evaluation. On the basis of our experimental results, the phase transition and dielectric anisotropy in PIN–PMN–PT have been discussed. Full article
(This article belongs to the Special Issue Research Progress of Perovskite Ferroelectric Materials)
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13 pages, 6489 KiB  
Article
Room-Temperature, Nanoscale Multiferroic Pb(Fe0.5Ta0.5)1−x(Zr0.53Ti0.47)xO3 (x = 0.2, 0.3) Thin Films Grown via the Pulsed Laser Deposition Technique
by Dilsom A. Sanchez, Karuna Kara Mishra, Sujoy Saha, Gopalan Srinivasan and Ram S. Katiyar
Crystals 2023, 13(10), 1442; https://doi.org/10.3390/cryst13101442 - 28 Sep 2023
Viewed by 1451
Abstract
Multiferroic materials capable of robust magnetoelectric coupling at room temperature are currently being explored for their possible multifunctional device applications. Highly (100)-oriented Pb(Fe0.5Ta0.5)x(Zr0.53Ti0.47)1−x (PZTFTx) thin films (x = 0.2 and [...] Read more.
Multiferroic materials capable of robust magnetoelectric coupling at room temperature are currently being explored for their possible multifunctional device applications. Highly (100)-oriented Pb(Fe0.5Ta0.5)x(Zr0.53Ti0.47)1−x (PZTFTx) thin films (x = 0.2 and 0.3) with a thickness of about 300 nm were grown on La0.67Sr0.33CoO3 (LSCO)-buffered MgO 100-oriented substrates via the pulsed laser deposition method. An analysis of their X-ray diffraction patterns suggests the stabilization of the orthorhombic phase in the thin films at room temperature. Dielectric spectroscopic measurements of the metal–insulator–metal (Pt/PZTFTx/LSCO) thin-film capacitors as a function of temperature revealed a diffuse ferroelectric-to-paraelectric phase transition around Tm ~520 and 560 K for the x = 0.2 and 0.3 thin films, respectively. Well-saturated electrical hysteresis loops with large remanent (Pr) and saturation (Ps) polarizations were observed in these capacitors, which indicates the establishment of intrinsic ferroelectric ordering in the thin films at room temperature. These thin films retained ferromagnetic/ferrimagnetic ordering up to 300 K and showed saturation magnetization values of 8.3 (x = 0.2) and 6.1 (x = 0.3) emu/cm3 at room temperature. The magnetoelectric coupling constants of 2040 mV/cmOe (x = 0.2) and 850 mV/cmOe (x = 0.3), respectively, were obtained at an in-plane bias field at room temperature. The present study demonstrates that PZTFTx thin films are multiferroic at room temperature with large magnetoelectric couplings, and these materials may be suitable for use in magnetic sensors and spintronic device applications. Full article
(This article belongs to the Special Issue Research Progress of Perovskite Ferroelectric Materials)
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12 pages, 3219 KiB  
Article
2D-Perovskite Multiferroics: Interface-Induced Magnetoelectric Effect in Perovskite-Based Multiferroic Superlattices
by Zukhra Gareeva, Ildus Sharafullin and Anatoly Zvezdin
Crystals 2023, 13(9), 1404; https://doi.org/10.3390/cryst13091404 - 21 Sep 2023
Viewed by 1369
Abstract
Multiferroics are materials crucial for energy-efficient scalable electronics. The implementation of an effective combination of ferroic orderings on the nanoscale requires the design of new multiferroic materials. Recently, there have been observations of magnetoelectricity in the antiferromagnetic Ruddlesden-Popper and perovskite oxides with the [...] Read more.
Multiferroics are materials crucial for energy-efficient scalable electronics. The implementation of an effective combination of ferroic orderings on the nanoscale requires the design of new multiferroic materials. Recently, there have been observations of magnetoelectricity in the antiferromagnetic Ruddlesden-Popper and perovskite oxides with the interfacial Dzyaloshinskii-Moriya interaction. We propose a model for studying magnetic states and magnetoelectric effects in magnetoelectrically coupled antiferromagnetic–ferroelectric bi-layers with the interfacial Dzyaloshinskii–Moriya interaction. The ground magnetic states are calculated for a system on a rectangular lattice, with Heisenberg spins interacting with each other via an antiferromagnetic exchange interaction and a Dzyaloshinskii–Moriya interaction in the absence of an external magnetic field. Our calculations show that the interfacial Dzyaloshinskii-Moriya interaction in the considered system leads to the stabilization of topological skyrmionic states in a zero magnetic field. We explore transformations of magnetic states considering the changes in the in-plane magnetic anisotropy constant and the magnetoelectric coupling parameter. Our findings have shown the possibility of the existence of several magnetic configurations: a skyrmion lattice, a skyrmion state, and a uniform antiferromagnetic ordering realized at a definite ratio of the system parameters. We determine the areas of the phases existence and the conditions required for spin-reorientation phase transitions. Full article
(This article belongs to the Special Issue Research Progress of Perovskite Ferroelectric Materials)
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12 pages, 5174 KiB  
Article
Phase Structure and Electrical Properties of 0.28PIN-0.32PZN–(0.4-x) PT-xPZ Piezoelectric Ceramics
by Xiaoyu Xu, Xiaoying Feng, Liyang Zhou, Hui Wang, Bin Yan, Mingxin Lu, Chao Chen, Hui Mei, Jie Xu and Feng Gao
Crystals 2023, 13(9), 1362; https://doi.org/10.3390/cryst13091362 - 10 Sep 2023
Cited by 1 | Viewed by 1132
Abstract
Piezoelectric constant and Curie temperature are two important parameters of piezoelectric materials, but currently most piezoelectric materials have the problem of obtaining both high piezoelectric coefficient and Curie temperature. In this work, quaternary piezoelectric ceramics of 0.28Pb(In1/2Nb1/2)O3-0.32Pb(Zn [...] Read more.
Piezoelectric constant and Curie temperature are two important parameters of piezoelectric materials, but currently most piezoelectric materials have the problem of obtaining both high piezoelectric coefficient and Curie temperature. In this work, quaternary piezoelectric ceramics of 0.28Pb(In1/2Nb1/2)O3-0.32Pb(Zn1/3Nb2/3)O3–(0.4-x)PbTiO3-xPbZrO3 (x = 0~0.25) were designed and prepared by a solid-phase method, and the phase structure, dielectric, piezoelectric and ferroelectric properties of 0.28PIN-0.32PZN-(0.4-x)PT-xPZ piezoelectric ceramics were investigated by regulating the Zr/Ti ratio. The results show that the selected compositions are located in the MPB region, and the ceramic samples of each component display high density, the piezoelectric constant (d33) and the electromechanical coupling coefficient (kp) increase and then decrease with the increase of x. The optimum piezoelectric properties are found in compositions at x = 0.1, which showed a high piezoelectric coefficient d33 of 450 pC/N and high Curie temperature Tc of 272 °C. It is promising for use in high-temperature piezoelectric transducers. Full article
(This article belongs to the Special Issue Research Progress of Perovskite Ferroelectric Materials)
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12 pages, 3555 KiB  
Article
High-Temperature Energy Storage Properties of Bi0.5Na0.5TiO3-0.06BaTiO3 Thin Films
by Ilham Hamdi Alaoui, Nathalie Lemée, Jamal Belhadi, Françoise Le Marrec, Anna Cantaluppi and Abdelilah Lahmar
Crystals 2023, 13(8), 1244; https://doi.org/10.3390/cryst13081244 - 12 Aug 2023
Cited by 3 | Viewed by 1165
Abstract
Bi0.5Na0.5TiO3-0.06BaTiO3 (BNT-BT) thin films were prepared via both chemical solution (CSD) and pulsed laser deposition (PLD). The structural, dielectric, and ferroelectric properties were investigated. High stability of the dielectric permittivity or TCC (∆ε/ε (150 °C) ≤ [...] Read more.
Bi0.5Na0.5TiO3-0.06BaTiO3 (BNT-BT) thin films were prepared via both chemical solution (CSD) and pulsed laser deposition (PLD). The structural, dielectric, and ferroelectric properties were investigated. High stability of the dielectric permittivity or TCC (∆ε/ε (150 °C) ≤ ±15%) over a wide temperature range from room temperature to 300 °C was obtained. Distinctly, the CSD film showed high TCC stability with variation of ±5% up to 250 °C. Furthermore, the CSD film showed an unsaturated ferroelectric hysteresis loop characteristic of the ergodic relaxor phase. However, the PLD one exhibited an almost saturated loop characteristic of the coexistence of both ergodic and non-ergodic states. The energy storage properties of the prepared films were determined using P–E loops obtained at different temperatures. The results show that these films exhibited a stable and improved energy storage density comparable to ceramic capacitors. Moreover, the CSD film exhibited more rigidity and better energy storage density, which exceeded 1.3 J/cm3 under a weak applied field of 317 kV/cm, as well as interesting efficiency in a large temperature range. The obtained results are very promising for energy storage capacitors operating at high temperatures. Full article
(This article belongs to the Special Issue Research Progress of Perovskite Ferroelectric Materials)
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17 pages, 14803 KiB  
Article
High-Temperature Piezoelectric Response and Thermal Stability of BiGaO3 Modified BiFeO3–BaTiO3 Lead-Free Piezoelectric Ceramics
by Shibo Guan, Huabin Yang, Shuai Cheng, Hua Tan, Guanjun Qiao, Qiaohong Chen, Jiwen Xu, Linna Yuan, Xueting Wang and Ling Yang
Crystals 2023, 13(7), 1026; https://doi.org/10.3390/cryst13071026 - 28 Jun 2023
Cited by 5 | Viewed by 1654
Abstract
BiGaO3 doped BiFeO3–BaTiO3 ceramics were prepared by the traditional solid-phase synthesis process. The phase analysis, microstructure, piezoelectric, ferroelectric, dielectric properties, and thermal stability of 0.7BiFeO3-(0.3 − x)BaTiO3-xBiGaO3 (Abbreviated as BF–BT-x [...] Read more.
BiGaO3 doped BiFeO3–BaTiO3 ceramics were prepared by the traditional solid-phase synthesis process. The phase analysis, microstructure, piezoelectric, ferroelectric, dielectric properties, and thermal stability of 0.7BiFeO3-(0.3 − x)BaTiO3-xBiGaO3 (Abbreviated as BF–BT-xBG) were investigated. The results show that the ceramics have rhombohedral (R) and tetragonal (T) structures. Particle dimensions gradually get bigger with the increase of BiGaO3 concentration, and dense ceramic grains were observed through SEM. Electrical properties of BF–BT-xBG are improved after adding a small amount of BiGaO3: piezoelectric constants d33 = 141 pC/N, electromechanical coupling coefficient kp = 0.314, mechanical Quality Factor Qm = 56.813, dielectric loss tanδ = 0.048, residual polarization intensity Pr = 18.3 µC/cm2, Curie temperature Tc = 485.2 °C, depolarization temperature Td = 465 °C for x = 0.003. The “temperature-piezoelectric performance” curve under in situ d33 indicates that piezoelectric properties d33 increase rapidly with increasing temperature. Remarkably, the piezoelectric response d33 reaches a maximum of 466 pC/N at a temperature T = 340 °C, and afterward, reduces gradually to zero with increasing temperature until 450 °C. Full article
(This article belongs to the Special Issue Research Progress of Perovskite Ferroelectric Materials)
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Review

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19 pages, 5750 KiB  
Review
Research Status and Development Trend of Piezoelectric Accelerometer
by Tianqiong Wu, Di You, Huayun Gao, Pinghua Lian, Weigang Ma, Xinyi Zhou, Chuanmin Wang, Jianghai Luo, Haibo Zhang and Hua Tan
Crystals 2023, 13(9), 1363; https://doi.org/10.3390/cryst13091363 - 11 Sep 2023
Cited by 11 | Viewed by 3856
Abstract
Piezoelectric accelerometers have been widely used because of their large range, simple structure, stable performance, and other advantages. With the improvement of science and technology, the application field is expanding, but there are still some problems in high-temperature environments and low-frequency vibration conditions. [...] Read more.
Piezoelectric accelerometers have been widely used because of their large range, simple structure, stable performance, and other advantages. With the improvement of science and technology, the application field is expanding, but there are still some problems in high-temperature environments and low-frequency vibration conditions. Under high-temperature environments, the piezoelectric material will undergo depolarization or resistance change, resulting in sensor failure. Aerospace instruments, water conservancy platforms, and other fields require high-precision instruments with vibration amplitudes of the order of a few microns in the range of 0.01–1 Hz, which require low-frequency and ultra-low-frequency sensors for the measurements. Therefore, how to increase the operating temperature and reduce the noise of piezoelectric accelerometers has become a problem that needs to be solved. This paper reviews the structure, principle, application range, and material selection of piezoelectric components of different types of piezoelectric accelerometers and summarizes the current problems and future research priorities. Full article
(This article belongs to the Special Issue Research Progress of Perovskite Ferroelectric Materials)
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