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Crystals
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Crystal Dislocations: Their Impact on Physical Properties of Crystals II
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Crystal Dislocations: Their Impact on Physical Properties of Crystals II

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 October 2020) | Viewed by 5814

Special Issue Editors

Prof. Dr. Peter Lagerlof

E-Mail Website
Guest Editor
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, USA
Interests: slip and twinning in ceramics and metals; X-ray diffraction; electron microscopy; microstructural development; mechanical properties
Special Issues, Collections and Topics in MDPI journals
Dr. Jonathan Amodeo

E-Mail Website
Guest Editor
Laboratoire MATEIS,UMR CNRS 5510 INSA-Lyon Université Lyon 1, Villeurbanne Cedex, France
Interests: multi-scale modeling of mechanical properties; toward mechanical properties at the nano-scale

Special Issue Information

Dear Colleagues,

The proposed existance of the edge and screw dislcoation in the 1930s and the subsequent work showing that dislocation theory could explain the plastic deformation of crystals represent an important step in developing our understanding of materials into a science. The continued work involved with the characterization of dislocations and linkage to a variety of physical properties in both single and poly crystals has led to enormous progress over the past 50 years. In addition, giant strides have been made in characterization and modeling of systems containg dislcocations. It is rare to find a technical application involving a material with any crystal structure that is not impacted by dislocations, mechanical properties, massive phase transformations, interphases, crystal growth, and electronic properties, among other factors. Further, the properties of many crystal systems are controlled by the formation of partial dislocations separated by a stacking fault, for example, plastic deformation via deformation twinning.

The Special Issue on “Crystal Dislocations” is intended to provide a unique international forum aimed at covering a broad range of studies involving dislocations and their importance on crystal properties and crystal growth. Scientists working in a wide range of disciplines are invited to contribute related works.

The list of key words shown below cover only a limited range of areas in which dislocations play an intrical part; however, this Special Issue of Crystals is open for any innovative contributions involving dislocations.

Prof. Peter Lagerlof
Dr. Jonathan Amodeo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • crystal dislocations
  • partial dislocations
  • crystal defect structures and properties
  • deformation twinning
  • massive phase transformations
  • characterization of dislocations
  • crystal growth

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Related Special Issue

Published Papers (2 papers)

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Research

13 pages, 3539 KiB  
Article
On the Study of Dislocation Density in MBE GaSb-Based Structures
by Agata Jasik, Dariusz Smoczyński, Iwona Sankowska, Andrzej Wawro, Jacek Ratajczak, Krzysztof Czuba and Paweł Kozłowski
Crystals 2020, 10(12), 1074; https://doi.org/10.3390/cryst10121074 - 25 Nov 2020
Cited by 2 | Viewed by 2715
Abstract
The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques were considered: high-resolution x-ray [...] Read more.
The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques were considered: high-resolution x-ray diffraction (HRXRD), etch pit density (EPD), and counting tapers on images obtained using atomic force microscopy (AFM). Additionally, high-resolution transmission electron microscopy (HRTEM) was used for selected samples. The density of dislocations determined using these methods varied, e.g., for IMF-GaSb/GaAs sample, were 6.5 × 108 cm−2, 2.2 × 106 cm−2, and 4.1 × 107 cm−2 obtained using the HRXRD, EPD, and AFM techniques, respectively. Thus, the value of TDD should be provided together with information about the measurement method. Nevertheless, the absolute value of TDD is not as essential as the credibility of the technique used for optimizing material growth. By testing material groups with known parameters, we established which techniques can be used for examining the dislocation density in GaSb-based structures. Full article
(This article belongs to the Special Issue Crystal Dislocations: Their Impact on Physical Properties of Crystals II)
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14 pages, 5955 KiB  
Article
Twinning in Czochralski-Grown 36°-RY LiTaO3 Single Crystals
by Yutaka Ohno, Yuta Kubouchi, Hideto Yoshida, Toshio Kochiya and Tomio Kajigaya
Crystals 2020, 10(11), 1009; https://doi.org/10.3390/cryst10111009 - 5 Nov 2020
Cited by 4 | Viewed by 2668
Abstract
The origin of twinning during the Czochralski (CZ) growth of 36°-RY lithium tantalate (LiTaO3) single crystals is examined, and it is shown that lineages composed of dislocation arrays act as an initiation site for twinning. Two types of lineages expand roughly [...] Read more.
The origin of twinning during the Czochralski (CZ) growth of 36°-RY lithium tantalate (LiTaO3) single crystals is examined, and it is shown that lineages composed of dislocation arrays act as an initiation site for twinning. Two types of lineages expand roughly along three different {12¯10} planes and two different {11¯00} planes. The former lineages and some latter lineages are composed of two types of mixed-dislocations with different Burgers vectors, while the other lineages are composed of only one type of edge-dislocation. All the dislocations have the Burgers vector of ⟨12¯10⟩ type with the compression side at the +Z side. Twin lamellae on {101¯2} are generated at a lineage during the CZ growth. We have hypothesized that dislocations in the lineage with b = 1/3⟨12¯10⟩ change their extension direction along a slip plane of {101¯2}, and they dissociate into pairs of partial dislocations with b = 1/6⟨22¯01⟩and 1/6⟨02¯21¯⟩ forming twin lamellae on {101¯2}. Full article
(This article belongs to the Special Issue Crystal Dislocations: Their Impact on Physical Properties of Crystals II)
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