Spin-dependent Optical, Plasmonic, Confinement and High-frequency Phenomena and Applications—Mini-symposium, ETOPIM11

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (31 October 2018)

Special Issue Editors


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Toyohashi University of Technology, Hibari-ga-oka 1-1, Tempaku, 441-8580, Toyohashi, Aichi, Japan
Interests: magnetics-based functional materials developments, such as magnetophotonic crystals, nano-composite materials, and their applications such as holographic data storage, optical switches, spatial light modulators, unwire SAW sensing system, 3D display
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Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
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Physics Department and Materials Science Department (Joint Appointment), Michigan Technological University, Houghton, MI, USA
Interests: photonics; nonreciprocal phenomena
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Toyohashi University of Technology, Toyohashi, Japan
Interests: Thermoelectric materials and engineering; Spin caloritronics; Magnetic hologram memory; Electrical and electronic materials; Materials processing

Special Issue Information

Dear Colleagues,

The introduction of artificial magnetic structures into magnetic materials, as well as geometrical confinement, can induce novel electromagnetic and spin-wave behavior. For instance, nano- and submicrometer-scale artificial magnetic lattices (AMLs), involving magnetophotonic crystals, volumetric magnetic holograms and even labyrinthian magnetic domain structures can control the optical waves in media. When the medium is combined with metallic material, the structures strongly affect the propagation of plasmon (magnetoplasmonics). Magnonic crystals are also classified into such AML media, in which propagation properties of spin-waves can be manipulated by the design of artificial structures. It is predicted that, in particular magneto-optic waveguide media, magnetization-induced electromagnetic spin-orbit coupling is possible.

In this mini-symposium, on all aspects of the above spin-dependent artificial structured media, including fundamental physical phenomena, material design and formation, measurements, applications in devices/systems, sensing functions/devices are discussed. The scope and keywords of the symposium are: Artificial magnetic lattices, magnetophotonics, magnetoplasmonics, magnonics, THz magneto-optics, fast spin reversal/dynamics, patterned media and structures, topological materials, magnetic imaging, optical/photonic devices, spin wave devices, applications in sensors and recordings. They are however not restrictive but are, rather, suggestive, and active participation, including young scientists/researchers, PhD, or Master-course students, is welcome.

Symposium Proceedings:

The symposium proceedings will be published as a Special Issue of Crystals (ISSN 2073-4352, IF=1.566), an open access journal. The organizer also encourages all participants of the symposium to submit their papers corresponding to their presentations. All papers are subject to normal reviewing process of Crystals and only accepted papers are included in the journal. Deadline of the paper submission is scheduled at the end of August, 2018.

For more information, please click on the following link:

http://etopim11.up.krakow.pl

Prof. Dr. Mitsuteru Inoue
Prof. Dr. Andrey Fedyanin
Prof. Dr. Miguel Levy
Prof. Dr. Yuichi Nakamura
Guest Editors

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Published Papers (3 papers)

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Research

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8 pages, 2099 KiB  
Article
Influence of Sputtered ZnO and Al:ZnO Top Layers on Magneto-Optic Responses of Yttrium Iron Garnet Films
by Shinichiro Mito, Satsuki Kikuchi, Yasutoshi Ito, Nana Ota and Mitsuteru Inoue
Crystals 2018, 8(10), 396; https://doi.org/10.3390/cryst8100396 - 22 Oct 2018
Viewed by 3372
Abstract
Zinc oxide (ZnO) is a promising material for combining with magneto-optic (MO) materials because it can propagate stable exciton-polaritons, with velocities considerably lower than that of photons in a vacuum. This study investigated the influence of sputtered ZnO and Al:ZnO top layers on [...] Read more.
Zinc oxide (ZnO) is a promising material for combining with magneto-optic (MO) materials because it can propagate stable exciton-polaritons, with velocities considerably lower than that of photons in a vacuum. This study investigated the influence of sputtered ZnO and Al:ZnO top layers on MO responses of a bismuth-substituted yttrium iron garnet (Bi:YIG) film. The ZnO top layer modulated the Faraday rotation and magnetic circular dichroism (MCD) of the Bi:YIG around the exciton resonance wavelength of ZnO at 369 nm. Furthermore, Al-substituted ZnO, which is a conductive ZnO, also changed the MO effects around the exciton resonance wavelength. These results imply that the exciton-polaritons in ZnO affect the MO interaction, because of their considerably low group velocity. The results suggest potential for controlling the MO response via excitons. Full article
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7 pages, 1580 KiB  
Article
Interference Induced Enhancement of Magneto-Optical Effect in Pt/TbCo Hetero-Structured Films
by Syougo Iemoto, Satoshi Sumi, Pham Van Thach, Hiroyuki Awano and Masamitsu Hayashi
Crystals 2018, 8(10), 377; https://doi.org/10.3390/cryst8100377 - 24 Sep 2018
Cited by 4 | Viewed by 3233
Abstract
Magnetic films with a heavy metal layer show strong interfacial interaction of spin-orbit. Spin-orbit interaction is one of the key technologies for spintronics. In this paper, we measured magneto-optical Kerr spectra of Pt/TbCo hetero-structure films on a thermally oxidized silicon substrate (0.3 mm); [...] Read more.
Magnetic films with a heavy metal layer show strong interfacial interaction of spin-orbit. Spin-orbit interaction is one of the key technologies for spintronics. In this paper, we measured magneto-optical Kerr spectra of Pt/TbCo hetero-structure films on a thermally oxidized silicon substrate (0.3 mm); A: Pt (3 nm)/TbCo (6 nm)/Pt (3 nm), B: Si3N4 (10 nm)/TbCo (6 nm)/Pt (3 nm), and C: Pt (3 nm)/TbCo (6 nm)/Si3N4 (10 nm). Magneto-optical Kerr spectra of each sample were measured with a wavelength range of 300–700 nm, and were compared to the simulated spectra using the effective refractive index method. In the sample A, which has a symmetric structure, the simulated spectra are consistent with the measured ones. On the other hand, in the samples B and C, with an asymmetric structure, there are some differences between the simulated spectra and the measured ones in a lower photon energy region. This may be caused by interfacial effects of the spin-orbit interaction. Full article
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Review

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13 pages, 4075 KiB  
Review
Ion Irradiation for Planar Patterning of Magnetic Materials
by Takeshi Kato, Daiki Oshima and Satoshi Iwata
Crystals 2019, 9(1), 27; https://doi.org/10.3390/cryst9010027 - 4 Jan 2019
Cited by 10 | Viewed by 3971
Abstract
Kr+ ion dose dependence of the magnetic properties of MnGa films and the fabrication of planar-patterned MnGa films by the local ion irradiation technique were reviewed. The magnetization and perpendicular anisotropy of the MnGa vanished at an ion dose of 1 × [...] Read more.
Kr+ ion dose dependence of the magnetic properties of MnGa films and the fabrication of planar-patterned MnGa films by the local ion irradiation technique were reviewed. The magnetization and perpendicular anisotropy of the MnGa vanished at an ion dose of 1 × 1014 ions/cm2 due to the phase change of the MnGa from ferromagnetic L10 to paramagnetic A1 phase. The average switching field Hsw of the planar-patterned MnGa increased with decreasing the bit size, implying low bit edge damage in the patterned MnGa, whereas a rather large switching field distribution (SFD) of 25% was confirmed for a bit size of ~40 nm. Time resolved magneto-optical Kerr effect measurements revealed that as-prepared MnGa exhibits an effective anisotropy field Hkeff = 20 kOe, its distribution ΔHkeff = 200 Oe, and Gilbert damping α = 0.008. The ion-irradiated MnGa films exhibited larger Hkeff = 22–23 kOe than that of the MnGa before the ion dose. Thus, ion irradiation does not decrease the perpendicular anisotropy, which suggests a small bit edge in the patterned MnGa. ΔHkeff increased from 0.2 kOe to 3 kOe, whereas the length of disorder in the film ξ decreased from 10 nm to 3 nm by ion irradiation. Full article
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