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Crystals
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Advanced Research in Semiconductor Materials and Devices
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Advanced Research in Semiconductor Materials and Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 7152

Special Issue Editors

Dr. Narmina O. Balayeva

E-Mail Website
Guest Editor
1. Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Rosenbergstraße 6, 09126 Chemnitz, Germany
2. Semiconductor Physics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Str. 70, 09126 Chemnitz, Germany
Interests: photocatalysis; organic synthesis; solar energy materials; photoelectrocatalysis; TiO2; thin films; semiconductor nanoparticles
Special Issues, Collections and Topics in MDPI journals
Dr. Zamin Mamiyev

E-Mail Website
Guest Editor
Solid Surface Analysis, Institute of Physics, Chemnitz University of Technology, Reichenhainer Str. 70, 09126 Chemnitz, Germany
Interests: semiconductor nanostructures; surface plasmons; 1D & 2D materials; graphene; quantum wires; adsorption, surface functionalization; intercalation; correlated electronic systems; surface crystallography

Special Issue Information

Dear Colleagues,

Semiconductor materials are the cornerstones of current and future optoelectronic technologies. Recently, new and effective materials have been designed for specific devices based on their unique physical, thermal, mechanical, electrical, magnetic, and optical characteristics. The requirements regarding increasing energy demand, industrialization, and urbanization set a priority for new cost- and energy-efficient devices, which in turn opens new avenues for materials research.

In this regard, numerous new candidate materials have been proposed, which have reduced dimensions in order to achieve the ultimate efficiency of functional devices. For example, extensive research has been devoted to developing graphene nanoribbons, reduced graphene oxide (rGO), transition metal dichalcogenides (i.e., MoS2, MoSe2, MoTe2, WS2, and WSe2), g-C3N4, metal oxide nano-films (TiO2, ZnO, Ta2O5, Nb2O5, WO3, Bi2O3, etc.), and 2D Van der Waals heterostructures, etc., as well as organic semiconductors. This was also predominantly boosted by the intervention of graphene, a metallic atomic-sized 2D material, which spreads to form low-dimensional (1D and 2D) semiconductor structures that replace their bulk counterparts.

Beyond cutting-edge electro-technology, there is immense materials research devoted to improving the chemical activities and capabilities of traditional materials in the direction of catalytic performance and tunable work function achieved by designing hetero architectures, porous structures, large specific surface areas, selective and active sites, surface functionality, composite materials, and so on.

This Special Issue is devoted to collecting excellent research contributions and review articles on a broad range of topics related to semiconducting materials and devices, but not limited to the following:

  1. Preparation, fabrication, synthesis, epitaxial growth, and optimization of semiconducting materials, including quantum materials, nanoparticles, nanostructures, thin films, and organic semiconductors.
  2. Semiconductor materials for energy and environmental applications, including photovoltaics, storage materials, batteries, hydrogen generation, fuel cells, water splitting, catalysis, and photocatalysis.
  3. Semiconductor materials for optical applications, such as plasmonic nanostructures, hybrid plasmonic devices, hot-carrier generation, plasmon-induced field enhancement, LEDs and OLEDs, photonic crystals, etc.
  4. Semiconductor materials for electronic applications, including field-effect transistors, metal oxide semiconductor field-effect transistors (MOSFET), integrated devices, organic field-effect transistors (OFETs), bipolar junction transistors, and p-n junctions.
  5. Semiconductor materials for Internet of Things (IoT) devices including smart home appliances, medical electronics, industrial automation, autonomous vehicles, and traffic control sensors, etc.
  6. Semiconductor materials modification, such as doping, structuring, surface functionalization, grafting, intercalation, porous, etc.
  7. Semiconductor templates for material growth, such as Si, Ge, SiC, GaAs, metal oxides, etc.

Dr. Narmina O. Balayeva
Dr. Zamin Mamiyev
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductors
  • plasmonics
  • thin films
  • organic semiconductors
  • energy conversion
  • photovoltaics
  • photocatalysis
  • transition metal dichalcogenide monolayers
  • Van der Waals heterostructures

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Further information on MDPI's Special Issue polices can be found here.

Published Papers (3 papers)

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Research

14 pages, 1125 KiB  
Article
Density Functional Investigation of [001] and [111] SiNWs and the Effect of Doping with Boron and Phosphorus
by Nedhal Ali Mahmood Al-Nuaimi, Florian Hilser and Sibylle Gemming
Crystals 2024, 14(7), 585; https://doi.org/10.3390/cryst14070585 - 25 Jun 2024
Cited by 1 | Viewed by 980
Abstract
In the present study, we investigate the influence of boron (B) and phosphorus (P) (p- and n-type, respectively) doping on the electronic properties of ultra-thin silicon nanowires (SiNWs) by gradient-corrected density functional calculations with the Perdew–Burke–Ernzerhof (PBE) approximation. In the limit of very [...] Read more.
In the present study, we investigate the influence of boron (B) and phosphorus (P) (p- and n-type, respectively) doping on the electronic properties of ultra-thin silicon nanowires (SiNWs) by gradient-corrected density functional calculations with the Perdew–Burke–Ernzerhof (PBE) approximation. In the limit of very small diameters (5–8 Å), both pristine and highly active unsaturated SiNWs with orientations along the [001] and [111] directions exhibit electronic states around the Fermi level, indicative of conductive properties. Conduction is further enhanced by the introduction of doping atoms, as demonstrated by the relative change in the band structures of SiNWs with and without B and P doping. This investigation provides an important insight into the electronic states of SiNWs, which are candidates for future electronics or sensing applications. Full article
(This article belongs to the Special Issue Advanced Research in Semiconductor Materials and Devices)
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23 pages, 5527 KiB  
Article
STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)N and (8 × 8) Structures in the SiN/Si(111) System
by Vladimir Mansurov, Timur Malin, Sergey Teys, Victor Atuchin, Denis Milakhin and Konstantin Zhuravlev
Crystals 2022, 12(12), 1707; https://doi.org/10.3390/cryst12121707 - 24 Nov 2022
Cited by 9 | Viewed by 2675
Abstract
The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on [...] Read more.
The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111) surface during ammonia nitridation. A significant dependence of the contrast between these structures on the voltage applied to the tunnel gap was found and studied both experimentally and theoretically. Variations in the contrast were quantitatively studied in the range from −3 V to +3 V, and they were studied in more detail for the positive biases on the sample from +1 V to +2.5 V, where the contrast was changed more than 2 times. Within the one-dimensional Wentzel–Kramers–Brillouin (WKB) model for the tunnel current, a comparatively simple procedure is proposed for the correction of the experimental STS-spectra of differential conductivity to identify the adequate (feasible) density of electron states (DOS). It is shown that the (8 × 8) structure DOS corresponds to a graphene-like layer of silicon nitride structure. The proposed correction procedure of the empirical differential conductivity spectra measured by STS will be useful for the quantitative determination of the DOS of new two-dimensional materials and surface structures. Full article
(This article belongs to the Special Issue Advanced Research in Semiconductor Materials and Devices)
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13 pages, 2114 KiB  
Article
Properties of SiC and Si3N4 Thin Films Containing Self-Assembled Gold Nanoparticles
by Senad Isaković, Maja Đekić, Marija Tkalčević, Denis Boršćak, Ivana Periša, Sigrid Bernstorff and Maja Mičetić
Crystals 2022, 12(10), 1361; https://doi.org/10.3390/cryst12101361 - 26 Sep 2022
Cited by 3 | Viewed by 2249
Abstract
The properties of semiconductor materials can be strongly affected by the addition of metallic nanoparticles. Here we investigate the properties of SiC + Au and Si3N4 + Au thin films prepared by magnetron sputtering deposition followed by thermal annealing. The [...] Read more.
The properties of semiconductor materials can be strongly affected by the addition of metallic nanoparticles. Here we investigate the properties of SiC + Au and Si3N4 + Au thin films prepared by magnetron sputtering deposition followed by thermal annealing. The influence of gold addition on the optical and electrical properties is explored. We show the formation of self-assembled Au nanoparticles in SiC and Si3N4, with the size and arrangement properties determined by the deposition and annealing conditions. Both SiC- and Si3N4-based films show an increase in the overall absorption with increasing Au content, and its decrease with increasing annealing temperature. All films show the presence of surface plasmon resonance, whose peaks shift toward larger wavelengths with increasing Au nanoparticle size. The resistivity significantly drops with the Au content increase for both types of matrices, although the resistivity of Si3N4-based films is much higher. The incorporated quantity of Au in the host matrix was chosen in such a way to demonstrate that a huge range of optical and electrical characteristics is achievable. The materials are very interesting for application in opto-electronic devices. Full article
(This article belongs to the Special Issue Advanced Research in Semiconductor Materials and Devices)
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