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Crystals
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Functional Oxide Based Thin-Film Materials
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Functional Oxide Based Thin-Film Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 August 2019) | Viewed by 69879

Printed Edition Available!
A printed edition of this Special Issue is available here.

Special Issue Editor

Prof. Dr. Dong-Sing Wuu

E-Mail Website
Guest Editor
Department of Materials Science and Engineering, National Chung Hsing University, 145 Xingda Road, Taichung 40227, Taiwan
Interests: functional oxides; III-nitrides; thin films; optoelectronics; sensors; displays
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Functional oxide based thin-film materials are extraordinary multifunctional crystals with a huge range of emerging application domains such as sensors, displays, light emitters, photovoltaics, nanotechnology, spintronics, piezoelectric motors, biotechnology, capacitors, transparent electronics, and next-generation memories.

The functional oxide crystal has several favorable properties, including good transparency, high conductivity, wide bandgap, and strong luminescence. Thin-film oxide materials have been grown on various substrates by sputtering, hydrothermal, sol-gel, Plasma CVD, MOCVD, PLD, HVPE, MBE etc. A number of breakthroughs over the past few years have driven an exponential energy in research activity of this field.

We invite investigators to submit papers which discuss the development of functional oxide -based thin-film materials, including thin film, nanostructured, and multilayered forms. Mixing oxide-based alloys with other materials could allow for the possible fabrication of advanced devices. Furthermore, the diluted magnetic crystals and combination with two-dimensional materials are welcomed.

The potential topics include, but again are not limited to:

  • Crystal growth of functional oxide based thin-film materials, including the modelling of crystal growth
  • Property characterization (optic, electric, piezoelectric, ferromagnetic properties, etc.) and their relationships to external conditions, such as electric field, photo pumping, current injection, stress, temperature, etc.
  • Advances in device development of finctional oxide based thin-film materials
  • Microstructure analysis and micro–macro correlation of the observed properties and their modelling
  • Characterization or modeling of micro-, nano-domain behavior in functional oxide based crystals
  • Novel applications of diluted magnetic oxide crystals and combination with two-dimensional materials
  • Reliability and stability of the crystal properties, including aging and fatigue, etc.

Prof. Dr. Dong-Sing Wuu
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Functional oxide-based compounds
  • Thin film growth
  • Material characterization
  • Device fabrication and applications

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Related Special Issue

Published Papers (12 papers)

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Editorial

Jump to: Research, Review

3 pages, 168 KiB  
Editorial
Special Issue Editorial: Functional Oxide Based Thin-Film Materials
by Dong-Sing Wuu
Crystals 2020, 10(3), 195; https://doi.org/10.3390/cryst10030195 - 12 Mar 2020
Cited by 1 | Viewed by 1800
Abstract
Protective oxide coatings, such as Al2O3 and Y2O3 coatings, are widely used in semiconductor industries because of their hardness, high wear resistance, dielectric strength, high corrosion resistance, and chemical stability for plasma chambers [...] Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)

Research

Jump to: Editorial, Review

11 pages, 3307 KiB  
Article
Structural and Optical Properties of ZnO Thin Films Prepared by Molecular Precursor and Sol–Gel Methods
by Theopolina Amakali, Likius. S. Daniel, Veikko Uahengo, Nelson Y. Dzade and Nora H. de Leeuw
Crystals 2020, 10(2), 132; https://doi.org/10.3390/cryst10020132 - 22 Feb 2020
Cited by 84 | Viewed by 12116
Abstract
Zinc oxide (ZnO) is a versatile and inexpensive semiconductor with a wide direct band gap that has applicability in several scientific and technological fields. In this work, we report the synthesis of ZnO thin films via two simple and low-cost synthesis routes, i.e., [...] Read more.
Zinc oxide (ZnO) is a versatile and inexpensive semiconductor with a wide direct band gap that has applicability in several scientific and technological fields. In this work, we report the synthesis of ZnO thin films via two simple and low-cost synthesis routes, i.e., the molecular precursor method (MPM) and the sol–gel method, which were deposited successfully on microscope glass substrates. The films were characterized for their structural and optical properties. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for piezoelectric applications. The surface roughness derived from atomic force microscopy (AFM) analysis indicates that films prepared via MPM were relatively rough with an average roughness (Ra) of 2.73 nm compared to those prepared via the sol–gel method (Ra = 1.55 nm). Thin films prepared via MPM were more transparent than those prepared via the sol–gel method. The optical band gap of ZnO thin films obtained via the sol–gel method was 3.25 eV, which falls within the range found by other authors. However, there was a broadening of the optical band gap (3.75 eV) in thin films derived from MPM. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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9 pages, 3543 KiB  
Article
Growth and Photocatalytic Properties of Gallium Oxide Films Using Chemical Bath Deposition
by Che-Yuan Yeh, Yi-Man Zhao, Hui Li, Fei-Peng Yu, Sam Zhang and Dong-Sing Wuu
Crystals 2019, 9(11), 564; https://doi.org/10.3390/cryst9110564 - 27 Oct 2019
Cited by 16 | Viewed by 4303
Abstract
Gallium oxide (Ga2O3) thin films were fabricated on glass substrates using a combination of chemical bath deposition and post-annealing process. From the field-emission scanning electron microscopy and x-ray diffraction results, the GaOOH nanorods precursors with better crystallinity can be [...] Read more.
Gallium oxide (Ga2O3) thin films were fabricated on glass substrates using a combination of chemical bath deposition and post-annealing process. From the field-emission scanning electron microscopy and x-ray diffraction results, the GaOOH nanorods precursors with better crystallinity can be achieved under higher concentrations (≥0.05 M) of gallium nitrate (Ga(NO3)3). It was found that the GaOOH synthesized from lower Ga(NO3)3 concentration did not transform into α-Ga2O3 among the annealing temperatures used (400–600 °C). Under higher Ga(NO3)3 concentrations (≥0.05 M) with higher annealing temperatures (≥500 °C), the GaOOH can be transformed into the Ga2O3 film successfully. An α-Ga2O3 sample synthesized in a mixed solution of 0.075 M Ga(NO3)3 and 0.5 M hexamethylenetetramine exhibited optimum crystallinity after annealing at 500 °C, where the α-Ga2O3 nanostructure film showed the highest aspect ratio of 5.23. As a result, the photodegeneration efficiencies of the α-Ga2O3 film for the methylene blue aqueous solution can reach 90%. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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7 pages, 1706 KiB  
Article
Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass
by Shang-Chou Chang and Huang-Tian Chan
Crystals 2019, 9(6), 310; https://doi.org/10.3390/cryst9060310 - 17 Jun 2019
Cited by 7 | Viewed by 3689
Abstract
Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. [...] Read more.
Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. In our experiments, in-line sputtered AZO and ITO bilayer (AZO/ITO) films on glass substrates were prepared first. The deposition of AZO/ITO films was following by annealing in hydrogen/nitrogen (H2/N2) plasma with different N2 flows. The structure and optical and electrical properties of AZO/ITO films were surveyed. Experiment results indicated that N2 flow in H2/N2 plasma annealing of AZO/ITO films slightly modified the structure and electrical properties of AZO/ITO films. The X-ray diffraction peak corresponding to zinc oxide (002) crystal plane slightly shifted to a higher angle and its full width at half maximum decreased as the N2 flow increased. The electrical resistivity and the emissivity reduced for the plasma annealed AZO/ITO films when the N2 flow was raised. The optimum H2/N2 gas flow was 100/100 for plasma annealed AZO/ITO films in this work for low emissivity application. The emissivity and average visible transmittance for H2/N2 = 100/100 plasma annealed AZO/ITO were 0.07 and 80%, respectively, lying in the range of commercially used low emissivity glass. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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14 pages, 4076 KiB  
Article
Research on the High-Performance Electrochemical Energy Storage of a NiO@ZnO (NZO) Hybrid Based on Growth Time
by Jiahong Zheng, Runmei Zhang, Kangkang Cheng, Ziqi Xu, Pengfei Yu, Xingang Wang and Shifeng Niu
Crystals 2019, 9(1), 47; https://doi.org/10.3390/cryst9010047 - 16 Jan 2019
Cited by 15 | Viewed by 4292
Abstract
A NiO@ZnO (NZO) hybrid with different reaction times was successfully synthesized by a green hydrothermal method. After comparison, it was found that hydrothermal time had a great impact on specific capacitance. As a supercapacitor electrode of NZO-12h, it exhibited the maximum reversible specific [...] Read more.
A NiO@ZnO (NZO) hybrid with different reaction times was successfully synthesized by a green hydrothermal method. After comparison, it was found that hydrothermal time had a great impact on specific capacitance. As a supercapacitor electrode of NZO-12h, it exhibited the maximum reversible specific capacitance of 985.0 F/g (3.94 F/cm2) at 5 mA/cm2 and 587.5 F/g (2.35 F/cm2) at 50 mA/cm2, as well as a high retention of 74.9% capacitance after 1500 cycles at 20 mA/cm2. Furthermore, the asymmetric electrode device with ZnO-12h and activated carbon (AC) as the positive and negative electrodes was successfully assembled. In addition, the device exhibited a specific capacitance of 85.7 F/g at 0.4 A/g. Moreover, the highest energy density of 27.13 Wh kg−1 was obtained at a power density of 321.42 W kg−1. These desirable electrochemical properties demonstrate that the NZO hybrid is a promising electrode material for a supercapacitor. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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5 pages, 2726 KiB  
Article
Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications
by Yi-Yun Chen, Yuan-Chang Jhang, Chia-Jung Wu, Hsiang Chen, Yung-Sen Lin and Chia-Feng Lin
Crystals 2018, 8(11), 418; https://doi.org/10.3390/cryst8110418 - 7 Nov 2018
Cited by 1 | Viewed by 2826
Abstract
An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an [...] Read more.
An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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18 pages, 7345 KiB  
Article
Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD
by Víctor Herrera, Tomás Díaz-Becerril, Eric Reyes-Cervantes, Godofredo García-Salgado, Reina Galeazzi, Crisóforo Morales, Enrique Rosendo, Antonio Coyopol, Román Romano and Fabiola G. Nieto-Caballero
Crystals 2018, 8(10), 395; https://doi.org/10.3390/cryst8100395 - 22 Oct 2018
Cited by 7 | Viewed by 4034
Abstract
Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and [...] Read more.
Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and Ta2O5 powders, and molecular hydrogen was used as a reactant gas. The percentage of tantalum varied from 0 to 500 mg by varying the percentages of tantalum oxide in the mixture of the pellet source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase, and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without doping, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by energy dispersive X-ray spectrometry (EDS), and X-ray diffraction (XRD) measurements. From scanning electron microscopy (SEM) images from undoped samples, mostly micro-sized semi-spherical structures were seen, while doped samples displayed a trend to grow as nanocrystalline rods. The presence of tantalum during the synthesis affected the growth direction. Green photoluminescence was observed by the naked eye when Ta-doped samples were illuminated by ultraviolet radiation and confirmed by photoluminescence (PL) spectra. The PL intensity on the Ta-doped ZnO increased from those undoped samples up to eight times. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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8 pages, 2639 KiB  
Article
Simulation and Analysis of Single-Mode Microring Resonators in Lithium Niobate Thin Films
by Huangpu Han, Bingxi Xiang and Jiali Zhang
Crystals 2018, 8(9), 342; https://doi.org/10.3390/cryst8090342 - 24 Aug 2018
Cited by 17 | Viewed by 5982
Abstract
The single-mode microring resonators on lithium niobate thin films were designed and simulated using 2.5-D variational finite difference time domain mode simulations from Lumerical mode Solutions. The single-mode conditions and the propagation losses of lithium niobate planar waveguide with different SiO2 cladding [...] Read more.
The single-mode microring resonators on lithium niobate thin films were designed and simulated using 2.5-D variational finite difference time domain mode simulations from Lumerical mode Solutions. The single-mode conditions and the propagation losses of lithium niobate planar waveguide with different SiO2 cladding layer thicknesses were studied and compared systematically. The optimization of design parameters such as radii of microrings and gap sizes between channel and ring waveguides were determined. The key issues affecting the resonator design such as free spectral range and Quality Factor were discussed. The microring resonators had radius R = 20 μm, and their transmission spectrum had been tuned using the electro-optical effect. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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16 pages, 3396 KiB  
Article
Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry
by Xuguang Luo, Yao Li, Hong Yang, Yuanlan Liang, Kaiyan He, Wenhong Sun, Hao-Hsiung Lin, Shude Yao, Xiang Lu, Lingyu Wan and Zhechuan Feng
Crystals 2018, 8(6), 248; https://doi.org/10.3390/cryst8060248 - 12 Jun 2018
Cited by 67 | Viewed by 10791
Abstract
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has [...] Read more.
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has been studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and variable angle spectroscopic ellipsometry (VASE). The XPS measurements and analyses revealed the insufficient chemical reaction at the lower oxygen flow rate and the film quality improved at higher oxygen flow rate. Via GIXRD, it was found that the HfO2 films on Si were amorphous in nature, as deposited at lower deposition temperature, while being polycrystalline at higher deposition temperature. The structural phase changes from interface to surface were demonstrated. The values of optical constants and bandgaps and their variations with the growth conditions were determined accurately from VASE and XPS. All analyses indicate that appropriate substrate temperature and oxygen flow are essential to achieve high quality of the AVD-grown HfO2 films. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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7 pages, 2310 KiB  
Article
Effect of Lithium Doping on Microstructural and Optical Properties of ZnO Nanocrystalline Films Prepared by the Sol-Gel Method
by Hung-Pin Hsu, Der-Yuh Lin, Cheng-Ying Lu, Tsung-Shine Ko and Hone-Zern Chen
Crystals 2018, 8(5), 228; https://doi.org/10.3390/cryst8050228 - 19 May 2018
Cited by 14 | Viewed by 3913
Abstract
The Zn1−xLixO (x = 0, 0.01, 0.03, and 0.05) nanocrystalline films were synthesized on silicon (Si) substrates by using the sol-gel method. The crystal structure and surface morphology of these films were investigated by X-ray diffraction (XRD) and field [...] Read more.
The Zn1−xLixO (x = 0, 0.01, 0.03, and 0.05) nanocrystalline films were synthesized on silicon (Si) substrates by using the sol-gel method. The crystal structure and surface morphology of these films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). We observed that the average grain size was gradually reduced with increasing doping Li content. Photoluminescence (PL) spectra show that increasing the Li content will deteriorate the crystalline quality and result in the decrease of ultraviolet emission from the excitonic recombination and the enhancement of visible emission from the recombination between the intrinsic defects. The current-voltage properties of Zn1−xLixO nanocrystalline films were also studied under dark and photo-illumination for photo-detection applications. The normalized photo-to-dark-current ratio (Iphoto − Idark)/Idark has been enhanced from 315 to 4161 by increasing the Li content of the Zn1−xLixO nanocrystalline films from zero to 0.05. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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14 pages, 8391 KiB  
Article
Epitaxial Crystallization of Precisely Methyl-Substituted Polyethylene Induced by Carbon Nanotubes and Graphene
by Weijun Miao, Yiguo Li, Libin Jiang, Feng Wu, Hao Zhu, Hongbing Chen and Zongbao Wang
Crystals 2018, 8(4), 168; https://doi.org/10.3390/cryst8040168 - 16 Apr 2018
Cited by 2 | Viewed by 3784
Abstract
How large of a substituent/branch a polyethylene possesses that can still be induced by nanofillers to form ordered chain structures is interesting, but uncertain. To solve this problem, precisely methyl-substituted polyethylene (PE21M) was chosen as a model to prepare its one-dimensional and two-dimensional [...] Read more.
How large of a substituent/branch a polyethylene possesses that can still be induced by nanofillers to form ordered chain structures is interesting, but uncertain. To solve this problem, precisely methyl-substituted polyethylene (PE21M) was chosen as a model to prepare its one-dimensional and two-dimensional nanocomposites with carbon nanotubes (CNTs) and graphene via solution crystallization. It is shown that kebab-like and rod-like nanofiller-induced crystals were separately observed on the surfaces of CNTs and graphene and the density of rod-like crystals is significantly less than kebab-like ones. The results of differential scanning calorimetry (DSC) and X-ray diffraction (XRD) reveal that CNTs and graphene cannot induce polymers with the substituent volume greater than, or equal to, 2 Å (methyl) to form ordered lattice structure, but CNTs exhibit the better nucleation effect, providing us with guidance to manipulate the physical performance of polymer composites on the basis of the size of the substituent and the type of nanofiller. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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Review

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29 pages, 88206 KiB  
Review
One-Dimensional Zinc Oxide Nanomaterials for Application in High-Performance Advanced Optoelectronic Devices
by Meng Ding, Zhen Guo, Lianqun Zhou, Xuan Fang, Lili Zhang, Leyong Zeng, Lina Xie and Hongbin Zhao
Crystals 2018, 8(5), 223; https://doi.org/10.3390/cryst8050223 - 18 May 2018
Cited by 65 | Viewed by 11214
Abstract
Unlike conventional bulk or film materials, one-dimensional (1D) semiconducting zinc oxide (ZnO) nanostructures exhibit excellent photoelectric properties including ultrahigh intrinsic photoelectric gain, multiple light confinement, and subwavelength size effects. Compared with polycrystalline thin films, nanowires usually have high phase purity, no grain boundaries, [...] Read more.
Unlike conventional bulk or film materials, one-dimensional (1D) semiconducting zinc oxide (ZnO) nanostructures exhibit excellent photoelectric properties including ultrahigh intrinsic photoelectric gain, multiple light confinement, and subwavelength size effects. Compared with polycrystalline thin films, nanowires usually have high phase purity, no grain boundaries, and long-distance order, making them attractive for carrier transport in advanced optoelectronic devices. The properties of one-dimensional nanowires—such as strong optical absorption, light emission, and photoconductive gain—could improve the performance of light-emitting diodes (LEDs), photodetectors, solar cells, nanogenerators, field-effect transistors, and sensors. For example, ZnO nanowires behave as carrier transport channels in photoelectric devices, decreasing the loss of the light-generated carrier. The performance of LEDs and photoelectric detectors based on nanowires can be improved compared with that of devices based on polycrystalline thin films. This article reviews the fabrication methods of 1D ZnO nanostructures—including chemical vapor deposition, hydrothermal reaction, and electrochemical deposition—and the influence of the growth parameters on the growth rate and morphology. Important applications of 1D ZnO nanostructures in optoelectronic devices are described. Several approaches to improve the performance of 1D ZnO-based devices, including surface passivation, localized surface plasmons, and the piezo-phototronic effect, are summarized. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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