We have investigated the effect of electron effective mass (
me*) and tail acceptor-like edge traps density (
NTA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the credibility of our simulation,
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We have investigated the effect of electron effective mass (
me*) and tail acceptor-like edge traps density (
NTA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the credibility of our simulation, we found that by adjusting
me* to 0.34 of the free electron mass (m
o), we can preferentially derive the experimentally obtained electrical properties of conventional a-IGZO TFTs through our simulation. Our initial simulation considered the effect of
me* on the electrical characteristics independent of
NTA. We varied the
me* value while not changing the other variables related to traps density not dependent on it. As
me* was incremented to 0.44 m
o, the field-effect mobility (
µfe) and the on-state current (
Ion) decreased due to the higher sub-gap scattering based on electron capture behavior. However, the threshold voltage (
Vth) was not significantly changed due to fixed effective acceptor-like traps (
NTA). In reality, since the magnitude of
NTA was affected by the magnitude of
me*, we controlled
me* together with
NTA value as a secondary simulation. As the magnitude of both
me* and
NTA increased,
µfe and Ion deceased showing the same phenomena as the first simulation. The magnitude of
Vth was higher when compared to the first simulation due to the lower conductivity in the channel. In this regard, our simulation methods showed that controlling
me* and
NTA simultaneously would be expected to predict and optimize the electrical characteristics of a-IGZO TFTs more precisely.
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