Semiconductors and Memory Technologies

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 20 April 2025 | Viewed by 588

Special Issue Editor


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Guest Editor
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Interests: semiconductor memory; static random access memory; non-volatile memory

Special Issue Information

Dear Colleagues,

Semiconductors are crucial as they form the backbone of modern electronics, enabling the functionality of devices like computers, smartphones, and medical equipment. They drive technological innovation and economic growth by powering the digital infrastructure essential to contemporary life.

Semiconductor technology is fundamental to semiconductor memory, which uses semiconductor-based components to store data in electronic devices. Innovations in semiconductor materials and fabrication techniques directly enhance the performance, capacity, and efficiency of various memory types.

Attention paid to research on semiconductors and memory technology focuses on several key areas to meet the increasing demands for performance, efficiency, and capacity:

  1. Advanced Memory Technologies: Developing next-generation memory solutions such as Resistive RAM (ReRAM), Phase-Change Memory (PCM), and Magnetoresistive RAM (MRAM). These technologies aim to offer higher speed, greater density, and non-volatility.
  2. Three-dimensional Memory Architectures: Exploring the vertical stacking of memory cells to increase storage density and reduce latency. Technologies like 3D NAND and 3D DRAM are at the forefront, providing significant improvements over traditional planar memory.
  3. Neuromorphic Memory: Creating memory devices that mimic the brain’s synaptic functions, enabling more efficient processing for artificial intelligence and machine learning applications. This includes the development of memristors and other synaptic devices.
  4. Spintronics: Utilizing electron spin rather than charge to store and process information. Spintronic memory devices promise lower power consumption and higher endurance compared to conventional memory technologies.
  5. Ultra-Low Power Memory: Innovating memory solutions that consume minimal power, essential for battery-powered and energy-harvesting devices, particularly on the Internet of Things (IoT) landscape.
  6. Integration with Emerging Technologies: Seamlessly integrating memory with cutting-edge technologies like quantum computing and photonics to enhance overall system performance and open new avenues for computing paradigms.
  7. Enhanced Reliability and Endurance: Focusing on improving the reliability and lifespan of memory devices through advanced materials, error correction techniques, and innovative architectural designs.

Dr. Soumitra Pal
Guest Editor

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Keywords

  • semiconductor technology
  • semiconductor memory
  • volatile memory
  • non-volatile memory
  • advanced memory technologies
  • 3D memory architectures
  • neuromorphic memory
  • spintronics
  • ultra-low-power memory

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Published Papers (1 paper)

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Research

11 pages, 4626 KiB  
Article
A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory
by Ji-yeon Lee, Jiho Song, Seonjun Choi, Jae-min Sim and Yun-Heub Song
Electronics 2024, 13(22), 4474; https://doi.org/10.3390/electronics13224474 - 14 Nov 2024
Viewed by 471
Abstract
In this paper, we proposed the development of stackable 3D ferroelectric random-access memory (FeRAM), with two select transistors and n capacitors (2TnC), to address scaling limitations for bit density growth and the complicated manufacturing of 3D dynamic random-access memory (DRAM). The proposed 3D [...] Read more.
In this paper, we proposed the development of stackable 3D ferroelectric random-access memory (FeRAM), with two select transistors and n capacitors (2TnC), to address scaling limitations for bit density growth and the complicated manufacturing of 3D dynamic random-access memory (DRAM). The proposed 3D FeRAM has a 3D NAND-like architecture, with stacked metal–ferroelectric–metal (MFM) capacitors serving as memory cells in a unit string. A similar manufacturing process is used to achieve a cost-effective process and high bit density for next-generation DRAM applications. The two access transistors, string–select–line (SSL) and ground–select–line (GSL), are perfect string selections. We confirmed that the grounded back gate (GBG) of the proposed architecture can significantly improve the worst disturbance case compared to a floating back gate (FBG) like the 1TnC structure. Also, we confirmed the feasibility of performing the random-access operation during the read operation regardless of the data pattern of the selected string. Full article
(This article belongs to the Special Issue Semiconductors and Memory Technologies)
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