Recent Advances in Power Electronic Systems Enhanced by Wide Bandgap Technology
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".
Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 6770
Special Issue Editor
Interests: power electronic systems; switched mode power supplies; resonant converters; power semiconductor devices; wireless power transfer; power density; efficiency optimization; thermal management; thermal modelling; lifetime optimization
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
The Guest Editor is inviting submissions to a Special Issue of Electronics on the subject area of the use of GaN and SiC technology to improve the performance of power semiconductor systems. Current trends within material engineering and development of perspective semiconductor devices have proven that wide bandgap technology represents the way to marry the contradictory requirements for power converters, i.e., high efficiency and simultaneously high-power density. There are numerous application areas where GaN power transistors can meet the strict requirements defined for the design of power semiconductor systems, i.e., from consumer applications up to industrial power converters. There is no limitation regarding where wide bandgap devices can be utilized, tested, and evaluated as the best in class choice of designers and electrical engineers. Thermal performance and reliability are also increasing demands for the application of power converters, while wide bandgap technology together with novel design approaches enable achieving satisfactory results. This Special Issue will focus on but is not strictly limited to:
- GaN and SiC power device testing, simulation, and modelling;
- High switching frequency power converter topologies;
- Progressive topologies utilizing GaN and SiC power transistors;
- Control techniques and control systems for high switching frequency power converter topologies;
- Design issues related to advanced power semiconductor converters using SiC and GaN technology;
- Optimized driving circuits for wide bandgap devices;
- GaN and SiC power modules for low voltage and high voltage applications;
- Thermal performance of power converters enhanced by wide bandgap devices;
- Magnetic component design issues related to the use of wide bandgap devices.
Prof. Dr. Michal Frivaldský
Guest Editor
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