Advances on Electronics for Harsh Environments

A special issue of Electronics (ISSN 2079-9292).

Deadline for manuscript submissions: closed (15 October 2024) | Viewed by 4006

Special Issue Editors


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Guest Editor
Department of Information Engineering, University of Pisa, 56122 Pisa, Italy
Interests: microelectronic design of analog and mixed-signal integrated circuits; ultra-low voltage and ultra-low power circuits; sensor data acquisition systems; wireless power transfer systems

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Guest Editor
Department of Information Engineering, University of Pisa, 56122 Pisa, Italy
Interests: quantum transport; materials/device engineering for electronics; design of analog and mixed-signal integrated circuits for artificial intelligence; analog circuit design; systems for the Internet of Things
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Special Issue Information

Dear Colleagues,

The development of new technologies and new design solutions enabled the presence of electronic systems, even in areas characterized by extreme working conditions, opening the way to unexplored fields of applications. By “harsh environment”, we mean the set of ambient conditions far from the standard ones usually considered during the design of conventional electronic systems, in terms of temperature, pressure, ionizing radiation, electromagnetic interference and radiation, chemical contamination, mechanical stress, moisture, etc. Space electronics represent a solid example where the designers need to implement different solutions at physical, circuit, architecture, and software levels to preserve performance in the presence of radiations and high temperature. Countless applications also exist on Earth where electronics need to face harsh environments. By considering possible extreme temperature ranges (well beyond commercial, industrial, or military ranges), we can sweep from few tens of mK, as for cryogenic electronics for quantum computing and physics experiments, to very high temperature electronics for industrial applications, drilling rigs, and electric engines. The human body represents another environment where safety issues dictate severe limitations for power dissipation and electromagnetic emissions of implantable and wearable medical devices. In some of these contexts, research of new technologies based on alternative materials represents the only viable way to match the strict requirements dictated by extreme working conditions. However, CMOS electronic systems capable of working beyond the certified ranges of the commercial technology processes remain attractive for large-scale integration. Within the aim of this Special Issue, the topics of interest include, but are not limited to, the following:

  • Wide-bandgap semiconductors and two-dimensional materials for electronic devices;
  • Digital and analog techniques to improve the robustness and the lifetime of electronic systems;
  • Smart-sensing systems for the monitoring of extreme environmental conditions;
  • Power management systems capable of working in extreme conditions;
  • RF communications in harsh environments.

Dr. Alessandro Catania
Prof. Dr. Giuseppe Iannaccone
Guest Editors

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Keywords

  • device modeling and characterization
  • emerging technologies
  • cryogenics electronics
  • high-temperature electronics
  • implantable and wearable devices
  • electronics for space explorations
  • radiation-hard systems, circuits, and technologies
  • physical and chemical sensing systems for extreme environments

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Published Papers (4 papers)

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Research

9 pages, 2778 KiB  
Article
Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current
by Hyeong Jun Joo, Si Sung Yoon, Seung Yoon Oh, Yoojin Lim, Gyu Hyung Lee and Geonwook Yoo
Electronics 2024, 13(22), 4515; https://doi.org/10.3390/electronics13224515 - 18 Nov 2024
Viewed by 436
Abstract
The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2Pr value of 74 µC/cm2), it exhibited a [...] Read more.
The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2Pr value of 74 µC/cm2), it exhibited a reduced leakage current (×1/100) and higher breakdown field. The MFIM showed a stable change in 2Pr from room temperature to 200 °C and an enhanced endurance of ~104 cycles at 200 °C; moreover, the leakage current was less degraded after the cycling tests. Thus, the ferroelectric AlScN with a thin HfO2 interlayer can enhance the reliability of ferroelectric switching. Full article
(This article belongs to the Special Issue Advances on Electronics for Harsh Environments)
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13 pages, 5547 KiB  
Article
Transient Liquid Phase Bonding with Sn-Ag-Co Composite Solder for High-Temperature Applications
by Byungwoo Kim, Gyeongyeong Cheon, Yong-Ho Ko and Yoonchul Sohn
Electronics 2024, 13(11), 2173; https://doi.org/10.3390/electronics13112173 - 3 Jun 2024
Viewed by 616
Abstract
In this study, a novel composite solder, Sn-3.5Ag-10.0Co, was tailored for transient liquid phase (TLP) bonding in electric vehicle power module integration. Employing a meticulous two-step joining process, the solder joint was transformed into a robust microstructure characterized by two high-melting point intermetallic [...] Read more.
In this study, a novel composite solder, Sn-3.5Ag-10.0Co, was tailored for transient liquid phase (TLP) bonding in electric vehicle power module integration. Employing a meticulous two-step joining process, the solder joint was transformed into a robust microstructure characterized by two high-melting point intermetallic compounds, Ni3Sn4 and (Co,Ni)Sn2. After 1 h of TLP bonding, the Sn-3.5Ag-10.0Co paste transformed into the IMCs, but voids persisted between them, particularly between (Co,Ni)Sn2 and Ni3Sn4. Voids significantly reduced after 2 h of bonding, with full coalescence of the joint microstructure observed. The joint continued to be densified after 3 h of TLP bonding, but voids tended to accumulate at the joint center. Failure analysis revealed crack propagation through Ni3Sn4/(Co,Ni)Sn2 interfaces and internal voids. The engineered Sn-Ag-Co TLP joint exhibited superior shear strength retention even at an elevated temperature of 200 °C, contrasting with the significant reduction observed in the Sn-3.5Ag control specimen due to remaining Sn. Full article
(This article belongs to the Special Issue Advances on Electronics for Harsh Environments)
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14 pages, 3958 KiB  
Article
Load Modulation Feedback in Adaptive Matching Networks for Low-Coupling Wireless Power Transfer Systems
by Michele Bertozzi, Alessandro Catania, Gabriele Bandini, Sebastiano Strangio and Giuseppe Iannaccone
Electronics 2023, 12(22), 4619; https://doi.org/10.3390/electronics12224619 - 12 Nov 2023
Cited by 1 | Viewed by 1120
Abstract
This paper explores the use of load modulation feedback (LMF) in adaptive matching networks (MN) for low-coupling inductive wireless power transfer systems, with an emphasis on its use in implantable medical devices. After deriving the handy expressions of link efficiency and modulation depth [...] Read more.
This paper explores the use of load modulation feedback (LMF) in adaptive matching networks (MN) for low-coupling inductive wireless power transfer systems, with an emphasis on its use in implantable medical devices. After deriving the handy expressions of link efficiency and modulation depth in the case of LMF in the case of loose coupling, a brief overview of the most common capacitive resonance networks is presented. In particular, the MN employing two capacitors in Series–Parallel and in Parallel–Series configurations allow adaptivity with a wide range of load conditions. Then, the authors describe an effective design procedure of an adaptive matching network with LMF for an inductive wireless power transfer system, exploring the trade-off between power efficiency and modulation depth. Analytical and electrical simulations show that the proposed simple modulation strategy can successfully achieve high power transfer efficiency while maintaining steady back telemetry under varying loading conditions. Full article
(This article belongs to the Special Issue Advances on Electronics for Harsh Environments)
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15 pages, 1790 KiB  
Article
High-Density Pixel Imaging Sensor Readout Electronics for Space Applications: A Design Overview
by Massimo Minuti, Carmelo Sgrò, Luca Baldini, Ronaldo Bellazzini, Alessandro Brez, Simone Castellano, Niccolo Di Lalla, Luca Latronico, Simone Maldera, Alberto Manfreda, Melissa Pesce-Rollins, Gloria Spandre, Mattia Barbanera, Saverio Citraro, Leonardo Lucchesi, Carlo Magazzù, Guido Magazzù, Paolo Mereu, Federico Mosti, Alessio Nuti, Leonardo Orsini, Hikmat Nasimi, Michele Pinchera, Davide Zanetti, Fabio Borotto, Marco Ceccanti, Marco Marengo, Alessandro Profeti, Ciro Caporale, Claudia Cardelli, Marcello Tardiola, Fabrizio Amici, Primo Attinà, Matteo Bachetti, Daniele Brienza, Mauro Centrone, Enrico Costa, Ettore Del Monte, Sergio Di Cosimo, Alessandro Di Marco, Giuseppe Di Persio, Yuri Evangelista, Sergio Fabiani, Riccardo Ferrazzoli, Fabio La Monaca, Carlo Lefevre, Pasqualino Loffredo, Alfredo Morbidini, Fabio Muleri, Matteo Perri, Raffaele Piazzolla, Maura Pilia, John Rankin, Ajay Ratheesh, Alda Rubini, Francesco Santoli, Emanuele Scalise, Paolo Soffitta, Antonino Tobia, Alessio Trois, Fei Xie, Rita Carpentiero, Marco Castronuovo, Elisabetta Cavazzuti, Fabio D’Amico, Immacolata Donnarumma, Barbara Negri, Simonetta Puccetti, Luca Cavalli, Elisa D’Alba, Paolo Lorenzi, Elio Mangraviti, Paolo Sarra, Andrea Sciortino, Marco Vimercati, Stefano Pieraccini and Francesco Zanettiadd Show full author list remove Hide full author list
Electronics 2023, 12(17), 3589; https://doi.org/10.3390/electronics12173589 - 25 Aug 2023
Viewed by 1165
Abstract
With the specialization of VLSI ASICs for front-end signal processing electronics, the customization of the control back-end electronics (BEE) has become critical to fully deploy the ASIC performance. In the context of space operations, with typical constraints on power and reliability, the design [...] Read more.
With the specialization of VLSI ASICs for front-end signal processing electronics, the customization of the control back-end electronics (BEE) has become critical to fully deploy the ASIC performance. In the context of space operations, with typical constraints on power and reliability, the design and qualification of such integrated systems present significant challenges. In this paper, we review the design and performance of the BEE systems after two years of operations in low Earth orbit (LEO); these systems read out the custom ASICs inside the gas pixel detectors, which are located at the heart of the imaging X-ray polarimetry explorer (IXPE), a NASA-ASI small explorer mission designed to measure X-ray polarization in the 2–8 keV energy range. Full article
(This article belongs to the Special Issue Advances on Electronics for Harsh Environments)
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