Advanced Materials/Devices for Power Electronics
A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "D1: Advanced Energy Materials".
Deadline for manuscript submissions: closed (31 October 2019) | Viewed by 7889
Special Issue Editor
Interests: power electronics; power semiconductor device; electrical characterization of power devices and power converters; CAE of power electronic system integration; multi-physics modeling; bond graph
Special Issue Information
Dear Colleagues,
The integration of renewable energies in traditional AC or DC electricity grids (HVDC, MVDC, LVDC) and the need for better energy efficiency have led to the increased electrification of our energy consumption. This requires more and more power converters with high performance (efficiency, compactness, reliability and ability to withstand harsh environments). To achieve these goals, more powerful power devices and materials with sharp features are needed. Power electronics has seen the arrival of new devices that perform better on silicon (trench, super-junctions, etc.) or based on materials with a wide band gap (SiC, GaN, Diamond), new structural variants (MOSFET, JFET, BJT, Schottky diodes, thyristor, HEMT and their combinations) with very sophisticated multiphysics analysis and design needs (close control, EMC disturbances, multiphysics optimizations).
The performance of these new devices also requires high-performance materials (electrical and thermal conductors, insulators, magnetic dielectrics) for the realization of passive components (capacitors and inductors, etc.) or the integration of chips into power integrated circuits or hybrid module performance and reliable power (packaging, encapsulation, ability to withstand harsh environments).
Prospective authors are invited to submit original contributions, survey papers or tutorials for review and potential publication in this Special Issue. Topics of interest include, but are not limited to:
- New power devices (Si, SiC, GaN, Diamond, etc.) for advanced operation.
- Characterization and modeling of new power devices.
- Power devices in their environment (gate drive, packaging, thermal management, etc.).
- New materials (conductor, thermal management, insulator, dielectric, magnetic, etc.) for advanced power electronics.
- Material modeling and characterization for advanced power electronics.
Dr. Hervé Morel
Guest Editor
Manuscript Submission Information
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Keywords
- power semiconductor devices
- wide band gap
- power device modeling and characterization
- material for advance power electronics
- energy efficiency, compactness and reliability
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