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Inorganics
Special Issues
Optical and Quantum Electronics: Physics and Materials
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Optical and Quantum Electronics: Physics and Materials

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Solid-State Chemistry".

Deadline for manuscript submissions: 20 May 2025 | Viewed by 7671

Special Issue Editor

Dr. Sergio Jiménez Sandoval

E-Mail Website
Guest Editor
Centro de Investigación y de Estudios Avanzados del IPN (Cinvestav-IPN), Campus Querétaro, Querétaro, Mexico
Interests: photovoltaic physics and devices; hot-carrier solar cells; photon–electron and electron–phonon interactions; photoconductivity; upconversion; charge transport in semiconductors and at interfaces; 2D materials; semiconductor films; dual doping in semiconductors; micro Raman and photoluminescence spectroscopies; lattice dynamics of crystalline materials and phonon physics

Special Issue Information

Dear Colleagues, 

The field of optical and quantum electronics (OQE) is one of the pillars of current technology and scientific development. The generation, control and detection of electromagnetic radiation in the submillimeter regime (terahertz, infrared, visible and ultraviolet) have become ubiquitous in everyday devices and research laboratories. The interaction of electromagnetic radiation with matter at the semiclassical and quantum level is, in turn, the founding block on which our current understanding and development of OQE have relied on. Moreover, the technological evolution shall continue depending to a large extent on the progress in this field, which comprises an ample portfolio on the physics of semiconductors, metals, semimetals, insulators, generation and detection of electromagnetic radiation, characterization of physical properties through the use of light as a probe or by its emission in excited materials (thermally or electrically), laser technology, and sensors, where quantum phenomena play a central role. Recent developments in the area of light-energy and energy-light conversion entail luminescent and upconversion materials, semiconductor lasers and LEDs, broad-wavelength light detectors, and imaging and plasmonic devices. Novel developments are pursued for the advancement of optical and quantum electronics, including unprecedented working principles, materials, different types of junctions, device architectures and nanophotonic devices. Therefore, for this Special Issue, contributions on the above-mentioned OQE items are invited, which may be in the form of letters, comments, regular articles or state-of-the-art reviews.

I look forward to receiving your contributions.

Dr. Sergio Jiménez Sandoval
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Inorganics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconducting properties
  • quantum phenomena
  • nanomaterials
  • 2D materials
  • light–matter interactions
  • upconversion
  • photoconductivity
  • photovoltaic materials and devices
  • nanophotonic devices
  • sensors

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Published Papers (5 papers)

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Research

Jump to: Review

14 pages, 4677 KiB  
Article
Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process
by Yuseong Jang, Chanmin Hwang, Sanggyu Bang and Hee-Dong Kim
Inorganics 2024, 12(12), 299; https://doi.org/10.3390/inorganics12120299 - 21 Nov 2024
Viewed by 486
Abstract
As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important. However, defects and traps within these T-RRAM devices can degrade their reliability. In this study, we investigated [...] Read more.
As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important. However, defects and traps within these T-RRAM devices can degrade their reliability. In this study, we investigated the improvement of transparency and reliability of T-RRAM devices with an AZO/HfO2/Ti structure through rapid thermal annealing (RTA) at 450 °C for 60 s in a nitrogen atmosphere. The device without RTA exhibited a low transmittance of 30%, whereas the device with RTA showed a significantly higher transmittance of over 75%. Furthermore, the device operated at lower current levels after RTA, which resulted in a reduction in its operating voltages, and the forming, setting, and reset voltages changed from 3.3, 2.4, and −5.1 V, respectively, to 2, 1, and −2.7 V. This led to an improvement in the endurance characteristics of the device, which thereby suggests that these improvements can be attributed to a reduction in the defects and trap density within the T-RRAM device caused by RTA. Full article
(This article belongs to the Special Issue Optical and Quantum Electronics: Physics and Materials)
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9 pages, 5149 KiB  
Article
Some Aspects of Hot Carrier Photocurrent across GaAs p-n Junction
by Steponas Ašmontas, Oleksandr Masalskyi, Ihor Zharchenko, Algirdas Sužiedėlis and Jonas Gradauskas
Inorganics 2024, 12(6), 174; https://doi.org/10.3390/inorganics12060174 - 20 Jun 2024
Viewed by 859
Abstract
The photocurrent across crystalline GaAs p-n junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excitation. This indicates that hot carriers do [...] Read more.
The photocurrent across crystalline GaAs p-n junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excitation. This indicates that hot carriers do not have enough energy to overcome the p-n junction until the forward bias significantly reduces the potential barrier. At a sufficiently high forward bias, the photocurrent is determined by the diffusion of hot carriers across the p-n junction. The current–voltage (I-V) characteristics measured at different crystal lattice temperatures show that the heating of carriers by laser radiation increases with a drop in crystal lattice temperature. This study proposes a novel model for evaluating carrier temperature based on the temperature coefficient of the I-V characteristic. It is demonstrated that the heating of carriers by light diminishes the conversion efficiency of a solar cell, not only through thermalisation but also because of the conflicting interactions between the hot carrier and conventional photocurrents, which exhibit opposite polarities. These findings contribute to an understanding of hot carrier phenomena in photovoltaic devices and may prompt a revision of the intrinsic losses in solar cells. Full article
(This article belongs to the Special Issue Optical and Quantum Electronics: Physics and Materials)
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23 pages, 2646 KiB  
Article
Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys
by Devki N. Talwar
Inorganics 2024, 12(4), 100; https://doi.org/10.3390/inorganics12040100 - 30 Mar 2024
Cited by 3 | Viewed by 1464
Abstract
Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sensing and photovoltaic applications. Despite [...] Read more.
Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sensing and photovoltaic applications. Despite numerous efforts made to simulate the structural, electronic, and dynamical properties of binary materials, no vibrational and/or thermodynamic studies exist for the ternary alloys. By adopting a realistic rigid-ion-model (RIM), we have reported methodical calculations to comprehend the lattice dynamics and thermodynamic traits of both binary and ternary compounds. With appropriate interatomic force constants (IFCs) of XC at ambient pressure, the study of phonon dispersions ωjq→ offered positive values of acoustic modes in the entire Brillouin zone (BZ)—implying their structural stability. For XxY1−xC, we have used Green’s function (GF) theory in the virtual crystal approximation to calculate composition x, dependent ωjq→ and one phonon density of states gω. With no additional IFCs, the RIM GF approach has provided complete ωjq→ in the crystallographic directions for both optical and acoustical phonon branches. In quasi-harmonic approximation, the theory predicted thermodynamic characteristics (e.g., Debye temperature ΘD(T) and specific heat Cv(T)) for XxY1−xC alloys. Unlike SiC, the GeC, SnC and GexSn1−xC materials have exhibited weak IFCs with low [high] values of ΘD(T) [Cv(T)]. We feel that the latter materials may not be suitable as fuel-cladding layers in nuclear reactors and high-temperature applications. However, the XC and XxY1−xC can still be used to design multi-quantum well or superlattice-based micro-/nano devices for different strategic and civilian application needs. Full article
(This article belongs to the Special Issue Optical and Quantum Electronics: Physics and Materials)
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Review

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17 pages, 11024 KiB  
Review
Introductory Overview of Layer Formation Techniques of Ag Nanowires on Flexible Polymeric Substrates
by Heebo Ha, Nadeem Qaiser and Byungil Hwang
Inorganics 2024, 12(3), 65; https://doi.org/10.3390/inorganics12030065 - 21 Feb 2024
Cited by 1 | Viewed by 1713
Abstract
Ag nanowire electrodes are promising substitutes for traditional indium tin oxide (ITO) electrodes in optoelectronic applications owing to their impressive conductivity, flexibility, and transparency. This review provides an overview of recent trends in Ag nanowire electrode layer formation, including key developments, challenges, and [...] Read more.
Ag nanowire electrodes are promising substitutes for traditional indium tin oxide (ITO) electrodes in optoelectronic applications owing to their impressive conductivity, flexibility, and transparency. This review provides an overview of recent trends in Ag nanowire electrode layer formation, including key developments, challenges, and future prospects. It addresses several challenges in integrating Ag nanowires into practical applications, such as scalability, cost-effectiveness, substrate compatibility, and environmental considerations. Additionally, drawing from current trends and emerging technologies, this review explores potential avenues for improving Ag nanowire layer-forming technologies, such as material advancements, manufacturing scalability, and adaptability to evolving electronic device architectures. This review serves as a resource for researchers, engineers, and stakeholders in nanotechnology and optoelectronics, and underscores the relationship between advancements in patterning and the application of Ag nanowire electrodes. Through an examination of key developments, challenges, and future prospects, this review contributes to the collective knowledge base and encourages continued innovation in the ever-evolving realm of Ag nanowire-based optoelectronics. Full article
(This article belongs to the Special Issue Optical and Quantum Electronics: Physics and Materials)
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17 pages, 4703 KiB  
Review
Polymeric Protection for Silver Nanowire-Based Transparent Conductive Electrodes: Performance and Applications
by Heebo Ha, Jun Young Cheong, Tae Gwang Yun and Byungil Hwang
Inorganics 2023, 11(10), 409; https://doi.org/10.3390/inorganics11100409 - 16 Oct 2023
Cited by 3 | Viewed by 2389
Abstract
Silver nanowires (AgNWs) are a potential alternative to conventional transparent conductive materials for various applications, such as flexible and transparent electrodes in optoelectronic devices, including touch screens, solar cells, and flexible displays. However, AgNW electrodes face degradation due to environmental factors, electrical instability, [...] Read more.
Silver nanowires (AgNWs) are a potential alternative to conventional transparent conductive materials for various applications, such as flexible and transparent electrodes in optoelectronic devices, including touch screens, solar cells, and flexible displays. However, AgNW electrodes face degradation due to environmental factors, electrical instability, and mechanical stress. To overcome these challenges, strategies to protect AgNW-based electrodes via the incorporation of polymeric materials were widely investigated to improve the durability and stability of AgNW-based electrodes. This review paper gives a comprehensive overview of the incorporation of polymeric materials with AgNW electrodes, emphasizing their performance, and applications. We compare the different polymeric materials and their effect on the electrical, optical, and mechanical properties of AgNW electrodes. Furthermore, we evaluate the key factors affecting the choice of protective layers, such as their compatibility with AgNWs, and also we present current challenges and future opportunities for the development of polymeric materials for AgNW electrodes in emerging technologies. Full article
(This article belongs to the Special Issue Optical and Quantum Electronics: Physics and Materials)
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