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Silicon Carbide Materials: Crystal Growth, Device Processing and Functional Applications
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Silicon Carbide Materials: Crystal Growth, Device Processing and Functional Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 May 2025 | Viewed by 5997

Special Issue Editors

Dr. Ivana Capan

E-Mail Website
Guest Editor
Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia
Interests: semiconductor crystals; defects; electronic devices; SiC
Special Issues, Collections and Topics in MDPI journals
Dr. Takahiro Makino

E-Mail Website
Guest Editor
National Institutes for Quantum and Radiological Science and Technology, Chiba, Japan
Interests: wide-bandgap semiconductors; devices; defects
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The progress recently achieved as regards crystal growth and comprehensive characterization of silicon carbide and similar materials has offered remarkable possibilities for functional application development.

This Special Issue of Materials, entitled “Silicon Carbide Materials: Crystal Growth, Device Processing and Functional Applications”, is dedicated to all aspects related to the crystal growth, material characterization, device fabrication, and applications of silicon carbide and related materials with the main aim of providing an extensive overview of the current state of the art of and future perspectives in the field.

Researchers working in the field are invited to contribute. Potential topics of interest include, but are not limited to, the following:

  • Crystal growth;
  • Wide-band gap semiconductors;
  • Material characterization;
  • Device fabrication;
  • SiC, GaN, Ga2O3, diamond.

Dr. Ivana Capan
Dr. Takahiro Makino
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • crystal growth
  • silicon carbide
  • characterization
  • defects
  • devices
  • applications
  • modeling

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Published Papers (4 papers)

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Research

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14 pages, 18667 KiB  
Article
Mechanical Properties of Silicon Carbide Composites Reinforced with Reduced Graphene Oxide
by Kamil Broniszewski, Jarosław Woźniak, Tomasz Cygan, Dorota Moszczyńska and Andrzej Olszyna
Materials 2024, 17(13), 3370; https://doi.org/10.3390/ma17133370 - 8 Jul 2024
Viewed by 672
Abstract
This article presents research on the influence of reduced graphene oxide on the mechanical properties of silicon carbide matrix composites sintered with the use of the Spark Plasma Sintering method. The produced sinters were subjected to a three-point bending test. An increase in [...] Read more.
This article presents research on the influence of reduced graphene oxide on the mechanical properties of silicon carbide matrix composites sintered with the use of the Spark Plasma Sintering method. The produced sinters were subjected to a three-point bending test. An increase in flexural strength was observed, which reaches a maximum value of 503.8 MPa for SiC–2 wt.% rGO composite in comparison to 323 MPa for the reference SiC sample. The hardness of composites decreases with the increase in rGO content down to 1475 HV10, which is correlated with density results. Measured fracture toughness values are burdened with a high standard deviation due to the presence of rGO agglomerates. The KIC reaches values in the range of 3.22–3.82 MPa*m1/2. Three main mechanisms responsible for the increase in the fracture toughness of composites were identified: bridging, deflecting, and branching of cracks. Obtained results show that reduced graphene oxide can be used as a reinforcing phase to the SiC matrix, with an especially visible impact on flexural strength. Full article
(This article belongs to the Special Issue Silicon Carbide Materials: Crystal Growth, Device Processing and Functional Applications)
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12 pages, 2649 KiB  
Article
Reactive Infiltration: Effects of Different Parameters
by M. Karla López-González, Leidy Figueroa-Quintero, David Villalgordo-Hernández, Enrique V. Ramos Fernández and Javier Narciso
Materials 2024, 17(13), 3063; https://doi.org/10.3390/ma17133063 - 21 Jun 2024
Viewed by 669
Abstract
Currently, the production of complex SiC and SiC/SiC parts through reactive infiltration is one of the most widely used technologies, due to its versatility and cost-effectiveness compared to more conventional technologies such as Hot Isostatic Pressing (HIP). This technology, while widely adopted, still [...] Read more.
Currently, the production of complex SiC and SiC/SiC parts through reactive infiltration is one of the most widely used technologies, due to its versatility and cost-effectiveness compared to more conventional technologies such as Hot Isostatic Pressing (HIP). This technology, while widely adopted, still faces some debate regarding the mechanisms of infiltration. Questions persist about what determines how infiltration occurs and whether the process is governed by physics (flow dynamics) or chemistry (reactions at the triple line (LT: (contact line between the solid, liquid and gas phases)). The present work provides new strong/consistent proof that reactive infiltration is mainly controlled by chemical reaction. Full article
(This article belongs to the Special Issue Silicon Carbide Materials: Crystal Growth, Device Processing and Functional Applications)
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18 pages, 5364 KiB  
Article
Study of the Chemical Vapor Deposition of Nano-Sized Carbon Phases on {001} Silicon
by Teodor Milenov, Dimitar Trifonov, Dobromir A. Kalchevski, Stefan Kolev, Ivalina Avramova, Stoyan Russev, Kaloyan Genkov, Georgi Avdeev, Dimitar Dimov, Desislava M. Karaivanova and Evgenia Valcheva
Materials 2023, 16(22), 7190; https://doi.org/10.3390/ma16227190 - 16 Nov 2023
Cited by 1 | Viewed by 1531
Abstract
Different nano-sized phases were synthesized using chemical vapor deposition (CVD) processes. The deposition took place on {001} Si substrates at about 1150–1160 °C. The carbon source was thermally decomposed acetone (CH3)2CO in a main gas flow of argon. We [...] Read more.
Different nano-sized phases were synthesized using chemical vapor deposition (CVD) processes. The deposition took place on {001} Si substrates at about 1150–1160 °C. The carbon source was thermally decomposed acetone (CH3)2CO in a main gas flow of argon. We performed experiments at two ((CH3)2CO + Ar)/Ar) ratios and observed that two visually distinct types of layers were deposited after a one-hour deposition process. The first layer type, which appears more inhomogeneous, has areas of SiO2 (about 5% of the surface area substrates) beside shiny bright and rough paths, and its Raman spectrum corresponds to diamond-like carbon, was deposited at a (CH3)2CO+Ar)/Ar = 1/5 ratio. The second layer type, deposited at (CH3)2CO + Ar)/Ar = a 1/0 ratio, appears homogeneous and is very dark brown or black in color and its Raman spectrum pointed to defect-rich multilayered graphene. The performed structural studies reveal the presence of diamond and diamond polytypes and seldom SiC nanocrystals, as well as some non-continuously mixed SiC and graphene-like films. The performed molecular dynamics simulations show that there is no possibility of deposition of sp3-hybridized on sp2-hybridized carbon, but there are completely realistic possibilities of deposition of sp2- on sp2- and sp3- on sp3-hybridized carbon under different scenarios. Full article
(This article belongs to the Special Issue Silicon Carbide Materials: Crystal Growth, Device Processing and Functional Applications)
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Review

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14 pages, 3024 KiB  
Review
Wide-Bandgap Semiconductors for Radiation Detection: A Review
by Ivana Capan
Materials 2024, 17(5), 1147; https://doi.org/10.3390/ma17051147 - 1 Mar 2024
Cited by 2 | Viewed by 2397
Abstract
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used [...] Read more.
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications. Full article
(This article belongs to the Special Issue Silicon Carbide Materials: Crystal Growth, Device Processing and Functional Applications)
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