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Selected Papers from ISCTA 2018
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Selected Papers from ISCTA 2018

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (15 September 2019) | Viewed by 19292

Special Issue Editors

Prof. Dr. Alexander T. Burkov

E-Mail Website
Guest Editor
Ioffe Institute, Saint Petersburg, Russia
Interests: electronic transport in strongly correlated conductors; thermoelectric properties of materials; thermoelectric energy conversion
Prof. Dr. Vladimir V. Khovaylo

E-Mail Website
Guest Editor
National University of Science & Technology “MISIS”, Moscow, Russian Federation
Interests: heusler alloys; nanostructured thermoelectric; magnetocaloric effect

Special Issue Information

Dear Colleagues,

Welcome to the XVI Interstate Conference “Thermoelectrics and Their Applications, 2018” (ISCTA 2018). This conference is the 16th in the series of inter-state conferences on “Thermoelectrics and their Applications” that provides an international forum for presentations and information exchange on thermoelectric materials science and thermoelectric energy conversion technology. This biannual conference series began in 1985 in Saint-Petersburg (Leningrad), Russia, as a forum of thermoelectric community of the Soviet Union. After the collapse of the Soviet Union, the conference provides the meeting place for scientists from the Independent States of the former Soviet Union. Now, we cordially invite international thermoelectric community to join this meeting in one of the most beautiful cities of Russia.

Prof. Dr. Alexander T. Burkov
Prof. Dr. Vladimir V. Khovaylo
Guest Editors

Manuscript Submission Information

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Keywords

  • thermoelectric materials
  • thermoelectric devises
  • thermoelectric energy conversion

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Published Papers (5 papers)

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Research

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15 pages, 4331 KiB  
Article
Laser Treatment as Sintering Process for Dispenser Printed Bismuth Telluride Based Paste
by Moritz Greifzu, Roman Tkachov, Lukas Stepien, Elena López, Frank Brückner and Christoph Leyens
Materials 2019, 12(20), 3453; https://doi.org/10.3390/ma12203453 - 22 Oct 2019
Cited by 3 | Viewed by 3133
Abstract
Laser sintering as a thermal post treatment method for dispenser printed p- and n-type bismuth telluride based thermoelectric paste materials was investigated. A high-power fiber laser (600 W, 1064 nm) was used in combination with a scanning system to achieve high processing speed. [...] Read more.
Laser sintering as a thermal post treatment method for dispenser printed p- and n-type bismuth telluride based thermoelectric paste materials was investigated. A high-power fiber laser (600 W, 1064 nm) was used in combination with a scanning system to achieve high processing speed. A Design of Experiment (DoE) approach was used to identify the most relevant processing parameters. Printed layers were laser treated with different process parameters and the achieved sheet resistance, electrical conductivity, and Seebeck coefficient are compared to tube furnace processed reference specimen. For p-type material, electrical conductivity of 22 S/cm was achieved, compared to 15 S/cm in tube furnace process. For n-type material, conductivity achieved by laser process was much lower (7 S/cm) compared to 88 S/cm in furnace process. Also, Seebeck coefficient decreases during laser processing (40–70 µV/K and −110 µV/K) compared to the oven process (251 µV/K and −142 µV/K) for p- and n-type material. DoE did not yet deliver a set of optimum processing parameters, but supports doubts about the applicability of area specific laser energy density as a single parameter to optimize laser sintering process. Full article
(This article belongs to the Special Issue Selected Papers from ISCTA 2018)
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8 pages, 421 KiB  
Article
The Evolution of Electron Dispersion in the Series of Rare-Earth Tritelluride Compounds Obtained from Their Charge-Density-Wave Properties and Susceptibility Calculations
by Pavel A. Vorobyev, Pavel D. Grigoriev, Kaushal K. Kesharpu and Vladimir V. Khovaylo
Materials 2019, 12(14), 2264; https://doi.org/10.3390/ma12142264 - 15 Jul 2019
Cited by 2 | Viewed by 2590
Abstract
We calculated the electron susceptibility of rare-earth tritelluride compounds RTe3 as a function of temperature, wave vector, and electron-dispersion parameters. Comparison of the results obtained with the available experimental data on the transition temperature and on the wave vector of a charge-density [...] Read more.
We calculated the electron susceptibility of rare-earth tritelluride compounds RTe3 as a function of temperature, wave vector, and electron-dispersion parameters. Comparison of the results obtained with the available experimental data on the transition temperature and on the wave vector of a charge-density wave in these compounds allowed us to predict the values and evolution of electron-dispersion parameters with the variation of the atomic number of rare-earth elements (R). Full article
(This article belongs to the Special Issue Selected Papers from ISCTA 2018)
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13 pages, 5535 KiB  
Article
Simulation of Field Assisted Sintering of Silicon Germanium Alloys
by Anastasiia Tukmakova, Anna Novotelnova, Kseniia Samusevich, Andrey Usenko, Dmitriy Moskovskikh, Alexandr Smirnov, Ekaterina Mirofyanchenko, Toshiyuki Takagi, Hiroyuki Miki and Vladimir Khovaylo
Materials 2019, 12(4), 570; https://doi.org/10.3390/ma12040570 - 14 Feb 2019
Cited by 13 | Viewed by 3753
Abstract
We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on [...] Read more.
We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the experimental data collected from spark plasma sintering (SPS) apparatus. The thermoelectric properties of Si-Ge used within the simulation were considered as the function of density and the sintering temperature. Quantitative estimation of the temperature distribution during the sintering pointed to a significant, up to 60 °C, temperature difference within the specimen volume for the case of the sintering temperature at 1150 °C. Full article
(This article belongs to the Special Issue Selected Papers from ISCTA 2018)
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Review

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20 pages, 2557 KiB  
Review
Electronic Structure of B20 (FeSi-Type) Transition-Metal Monosilicides
by Dmitry A. Pshenay-Severin and Alexander T. Burkov
Materials 2019, 12(17), 2710; https://doi.org/10.3390/ma12172710 - 24 Aug 2019
Cited by 29 | Viewed by 5612
Abstract
Monosilicides of transition metals crystallizing in a B20 (FeSi-type) structure (space group P2 1 3, #198) possess a wide range of specific properties. Among them are semiconductors, metals, and paramagnetic, diamagnetic, and ferromagnetic compounds. Some of them were studied as promising thermoelectric materials. [...] Read more.
Monosilicides of transition metals crystallizing in a B20 (FeSi-type) structure (space group P2 1 3, #198) possess a wide range of specific properties. Among them are semiconductors, metals, and paramagnetic, diamagnetic, and ferromagnetic compounds. Some of them were studied as promising thermoelectric materials. Recently, B20 monosilicides have attracted attention as a new class of topological semimetals with topological charge greater than unity. In the present work, we analyze the electronic structures of B20-type monosilicides of the fourth, fifth, and sixth periods of the Periodic Table in order to reveal their common features and peculiarities. To make this analysis more consistent, we performed a density-functional study of the electronic structures of the monosilicides in a unified manner. We reviewed the results of previous calculations and the available experimental data, comparing them with our results. The band structures of ReSi and TcSi not found in the literature were calculated and analyzed as well. The topological properties of these materials and of some isostructural germanides and stannides were investigated. Analysis reveals the current understanding of electronic structures and properties of this compound group. Full article
(This article belongs to the Special Issue Selected Papers from ISCTA 2018)
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10 pages, 7996 KiB  
Review
Si-Based Materials for Thermoelectric Applications
by Sora-at Tanusilp and Ken Kurosaki
Materials 2019, 12(12), 1943; https://doi.org/10.3390/ma12121943 - 17 Jun 2019
Cited by 15 | Viewed by 3714
Abstract
Si-based thermoelectric materials have attracted attention in recent decades with their advantages of low toxicity, low production costs, and high stability. Here, we report recent achievements on the synthesis and characterization of Si-based thermoelectric materials. In the first part, we show that bulk [...] Read more.
Si-based thermoelectric materials have attracted attention in recent decades with their advantages of low toxicity, low production costs, and high stability. Here, we report recent achievements on the synthesis and characterization of Si-based thermoelectric materials. In the first part, we show that bulk Si synthesized through a natural nanostructuring method exhibits an exceptionally high thermoelectric figure of merit zT value of 0.6 at 1050 K. In the second part, we show the synthesis and characterization of nanocomposites of Si and metal silicides including CrSi2, CoSi2, TiSi2, and VSi2. These are synthesized by the rapid-solidification melt-spinning (MS) technique. Through MS, we confirm that silicide precipitates are dispersed homogenously in the Si matrix with desired nanoscale sizes. In the final part, we show a promising new metal silicide of YbSi2 for thermoelectrics, which exhibits an exceptionally high power factor at room temperature. Full article
(This article belongs to the Special Issue Selected Papers from ISCTA 2018)
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