materials-logo

Journal Browser

Journal Browser

Ferroelectrics and Antiferroelectrics: Microstructures, Properties and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: 20 February 2025 | Viewed by 700

Special Issue Editor

School of Aerospace, Mechanical, and Mechatronic Engineering, The University of Sydney, Sydney, NSW, 2006, Australia
Interests: functional materials; ferro- and antiferroelectrics; in situ biasing/straining/heating and cs-corrected transmission electron microscopy; topological domains and domain walls; thin-film growth; nanomechanics

Special Issue Information

Dear Colleagues,

Ferroelectrics and antiferroelectrics have wide-ranging applications in fields such as information and communication technology, medical imaging, and energy harvesting and conversion. Recent advances in HfO2-based ferroelectrics/antiferroelectrics, high-entropy relaxor ferroelectrics, ferroelectric/antiferroelectric membranes, and two-dimensional van der Waals ferroelectrics have ignited a fresh sense of vitality into the field. Research on ferroelectric and antiferroelectric materials faces many challenges, such as material stability, manufacturing costs, and device integration. To overcome these challenges requires multidisciplinary collaboration and innovation. In the future, research on ferroelectric and antiferroelectric materials will focus on achieving high performance, low cost, and multifunctionality. Interdisciplinary collaboration and continuous technological innovation will drive ongoing progress in this field. This Special Issue will compile the latest research findings, review articles, and application examples of ferroelectrics and antiferroelectrics, showcasing the cutting-edge advancements in the field.

This Special Issue focuses on, but is not limited to, the following areas: (1) innovative methods and processes for the synthesis of ferroelectric and antiferroelectric materials; (2) unique structure discovered in ferroelectrics and antiferroelectrics; (3) the optimization of the electrical, thermal, and mechanical properties; (4) performance and prospects of ferroelectric and antiferroelectric materials in practical applications, including electronic devices, sensors, memory devices, energy harvesting, and conversion; and (5) understanding and predicting the relationship between the structure and properties of materials through theoretical calculations and simulations.

Dr. Ying Liu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ferroelectrics
  • antiferroelectics
  • microstructure–property relationship
  • electronic devices
  • energy harvesting and conversion

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

15 pages, 7239 KiB  
Article
Low Sintering Temperature Effect on Crystal Structure and Dielectric Properties of Lead-Free Piezoelectric Bi0.5Na0.5TiO3-NaFeTiO4
by Luis G. Betancourt-Cantera, Yaneli Reséndiz-Trejo, Félix Sánchez-De Jesús, Claudia A. Cortés Escobedo and Ana M. Bolarín-Miró
Materials 2024, 17(20), 5087; https://doi.org/10.3390/ma17205087 - 18 Oct 2024
Viewed by 489
Abstract
Bi0.5Na0.5TiO3 (BNT) emerges as a promising ferroelectric and piezoelectric lead-free candidate to substitute the contaminant Pb[TixZr1−x]O3 (PZT). However, to obtain optimal ferroelectric and piezoelectric properties, BNT must be sintered at high temperatures. In [...] Read more.
Bi0.5Na0.5TiO3 (BNT) emerges as a promising ferroelectric and piezoelectric lead-free candidate to substitute the contaminant Pb[TixZr1−x]O3 (PZT). However, to obtain optimal ferroelectric and piezoelectric properties, BNT must be sintered at high temperatures. In this work, the reduction of sintering temperature by using iron added to BNT is demonstrated, without significant detriment to the dielectric properties. BNT-xFe with iron from x = 0 to 0.1 mol (∆x = 0.025) were synthesized using high-energy ball milling followed by sintering at 900 °C. XRD analysis confirmed the presence of rhombohedral BNT together with a new phase of NaFeTiO4 (NFT), which was also corroborated using optical and electronic microscopy. The relative permittivity, in the range of 400 to 500 across all the frequencies, demonstrated the stabilization effect of the iron in BNT. Additionally, the presence of iron elevates the transition from ferroelectric to paraelectric structure, increasing it from 330 °C in the iron-free sample to 370 °C in the sample with the maximum iron concentration (0.1 mol). The dielectric losses maintain constant values lower than 0.1. In this case, low dielectric loss values are ideal for ferroelectric and piezoelectric materials, as they ensure minimal energy dissipation. Likewise, the electrical conductivity maintains a semiconductor behavior across a range of 50 Hz to 1 × 106 Hz, indicating the potential of these materials for applications at different frequencies. Additionally, the piezoelectric constant (d33) values decrease slightly when low concentrations of iron are added, maintaining values between 30 and 48 pC/N for BNT-0.025Fe and BNT-0.05Fe, respectively. Full article
Show Figures

Figure 1

Back to TopTop