Metal Oxide Semiconductors for Electronic Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".
Deadline for manuscript submissions: closed (20 September 2024) | Viewed by 2282
Special Issue Editors
Interests: multicomponent oxides; nanostructures; nanofabrication; nano-lithography (EBL); nanodevices; flexible and transparent technology; oxide thin film transistors; energy harvesting; multifunctionality; sustainability
Special Issues, Collections and Topics in MDPI journals
Interests: TCAD simulation; oxide TFTs; flexible electronics; device physics; oxide thin films; oxide transistors; VCM memristors
Special Issues, Collections and Topics in MDPI journals
Interests: IoT-memristor; thin film transistor; oxide electronic; paper electronic
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
New era concepts of Internet of things (IoT) and smart surfaces are now demanding transparent, flexible, and nanoscale devices and materials. In this regard, metal oxides have emerged as key materials, following from how metal oxide thin films, namely indium-gallium-zinc oxide (IGZO), were successfully applied for the backplanes technology. In fact, comparing with other technologies, such as polycrystalline/amorphous silicon, 2D transition metal dichalcogenides (TMDs) and graphene, metal oxides can be highly competitive since they present good reproducibility, large-area uniformity, and lower fabrication temperatures and costs, being compatible with flexible and transparent technology while still enabling good electrical and optical properties.
Moreover, metal oxide nanostructures have similarly been demonstrating excellent properties, and, while the implementation of nanostructures in devices and circuits still requires significant development, it would enable for very high levels of integrability and performance.
This Special Issue welcomes the submission of original papers and/or review articles focused on the fabrication of metal oxide semiconductors, in both the form of thin films or nanostructures, and their application in electronics.
Relevant topics may include (but are not limited to):
- Metal oxide semiconductors characterization and fabrication;
- Sustainable materials and processes;
- Advances in the integration of metal oxide semiconductor nanostructures;
- Transparent and flexible electronics;
- Electronic devices such as field effect transistors, memristors, sensors, nanogenerators, and photodetectors;
- Application of metal oxide semiconductors to electronic circuits or systems;
- Devices’ modelling and simulation.
You may choose our Joint Special Issue in Electronic Materials.
Dr. Ana Rovisco
Dr. Jorge Martins
Dr. Asal Kiazadeh
Guest Editors
Manuscript Submission Information
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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- metal oxides
- semiconductors
- thin films
- nanomaterials
- transistors
- memristors
- optoelectronics
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