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Active Functional Materials and Wearable Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Smart Materials".

Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 4730

Special Issue Editor

Centre for Future Materials (Research), University of Southern Queensland, Toowoomba, Queensland, Australia
Interests: micro/nano electromechanical systems (MEMS/NEMS) sensors and actuators; physics of semiconductors and nanomaterials; advanced materials for flexible, stretchable and wearable electronics; photovoltaic and thermoelectric materials; sensors for harsh environment applications

Special Issue Information

Dear Colleagues,

Functional materials have recently attracted considerable interest from researchers from academy and industry who are working towards flexible, stretchable and wearable applications. Flexible sensors, actuators and electronics have been developed owing to the unique mechanical robustness of functional soft materials that have high flexibility, stretchability and wearability. Examples of these functional materials include but are not limited to carbon nanomaterials (e.g. carbon nanotube and graphene), polymers (e.g. polypyrrole and PEDOT materials), metal nanostructures (e.g. silver and coper nanowires) as well as hybrid materials.  

In addition, diverse approaches to structural design and advanced fabrication technologies enable the development of smart structures and devices (e.g. bulked and prestressed structures, and mesh, coil, sponge and wavy structures) that can be stretched and work stably under mechanical disturbances. Functional materials for flexible electronics and wearable technologies can be employed in a wide range of applications, including wearable heathcare, flexible displays, solid-state electronics, sensors (e.g. physical and gas sensors), nanogenerators and solar cells that are thin, lightweight, robust, bendable and conformable to human bodies.

This Special Issue highlights and discusses the modern trend of functional materials and their applications for flexible, stretchable and wearable devices, including fundamental research into materials, fabrications and processes, as well as the development of potential flexible and stretchable wearable applications.

It is my pleasure to invite you to submit a manuscript to this Special Issue. Submissions of communications, full papers, and reviews are all welcome.

Dr. Toan Dinh
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Keywords

  • Functional materials
  • Carbon nanotube
  • Carbon black
  • Graphite
  • Graphene
  • Polymers
  • Ionic liquid and gels
  • Liquid metals
  • Metal nanowires
  • Hybrid materials
  • Stretchable structures
  • Flexible heaters
  • Flexible sensors
  • Electronic skins
  • Paper-based electronics
  • Flexible electronics
  • Flexible optoelectronics
  • Flexible actuators
  • Nano energy
  • Wearable devices

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Published Papers (1 paper)

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Research

10 pages, 2386 KiB  
Article
Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods
by Huu Trung Nguyen, Hisashi Yamada, Toshikazu Yamada, Tokio Takahashi and Mitsuaki Shimizu
Materials 2020, 13(4), 899; https://doi.org/10.3390/ma13040899 - 18 Feb 2020
Cited by 9 | Viewed by 4265
Abstract
We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior [...] Read more.
We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique. The electron mobility of 100 cm2/V·s, subthreshold of 500 mV/dec, and transconductance of 14 μs/mm are measured in GaN-MOSFETs based on the implantation technique. Meanwhile, the GaN-MOSFETs fabricated using the regrowth method perform the electron mobility, transconductance, and subthreshold of 120 cm2/V s, 18 μs/mm, and 300 mV/dec, respectively. Additionally, the MOSFETs with the regrown p-GaN gate body show the Ion/Ioff ratio of approximately 4 × 107, which is, to our knowledge, among the best results of GaN-MOSFETs to date. This research contributes a valuable information for the design and fabrication of power switching devices based on GaN. Full article
(This article belongs to the Special Issue Active Functional Materials and Wearable Applications)
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