Prospects of Oxide Materials Electronic Structure and Related Applications in Devices
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (20 March 2023) | Viewed by 2244
Special Issue Editors
Interests: ferroelectric materials; field-effect transistors; hafnium oxides; germanium oxides
Special Issue Information
Dear Colleagues,
Oxide materials have been extensively exploited in the electronics industry due to their ability to function in dielectrics, semiconductors or conductors. High-κ oxides have been broadly adopted in field-effect transistors (FETs) to lower the operating voltage. Owing to a high mobility and small leakage current, oxide semiconductors have been studied intensively, and oxide thin-film transistors (TFTs) have been commercialized in flat-panel displays. Additionally, further efforts are being contributed towards the realization of ultra-high-mobility oxide TFTs. In addition, transparent oxide conductors are widely used in solar cells and the display industry. Recently, functional oxide materials, such as ferroelectric oxides, have attracted much attention owing to their low-temperature preparation process being COMS-compatible. Ferroelectric oxides have been adopted in negative capacitance FETs (NC FETs) and ferroelectric FETs (FeFETs). The topic’s rapid growth and increasing interest in the areas of oxide materials and related devices are the main reasons for this Special Issue on “Prospects of Oxide Material Electronic Structures and Related Applications in Devices”. Contributions should focus on novel achievements, both theoretical and experimental, relative (but not limited) to high-mobility oxide materials, oxide TFTs, ferroelectric oxides, NC FETs, FeFETs, etc.
The Special Issue intends to provide researchers working in the field with a platform for the dissemination of their ideas regarding the design and characterization of novel oxides and oxide-based devices, highlighting outstanding performance developments and exploring additional promising applications. It should also stimulate a cross-fertilization between researchers of the field with other readers of the journal, providing the opportunity to find novel potential research directions.
Prof. Dr. Genquan Han
Dr. Bochang Li
Guest Editors
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Keywords
- ferroelectric materials
- field-effect transistor
- gate dielectrics
- NC FET
- oxide semiconductor
- oxide conductor
- thin-film transistors
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