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Micromachines
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III-V/III-N Materials and Devices
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III-V/III-N Materials and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (31 May 2023) | Viewed by 11079

Special Issue Editor

Prof. Dr. Han Eol Lee

E-Mail Website
Guest Editor
Division of Advanced Materials Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea
Interests: flexible and wearable electronics; electronic skin; micro light-emitting diodes; compound semiconductor materials (III-V, III-N); microLED-based displays and biomedical applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

III-V/III-N compound semiconductors have attracted much attention owing to their superior electrical and photonic properties for devices. The III-V/III-N-based devices have been applied to practical applications in solid-state photonics and electronics. Furthermore, several researchers have modulated the compound semiconductor structures, enhancing the electrical, optical, and thermal properties for novel and/or improved performance in applied technologies. This Special Issue focuses on the latest research results for III-V materials/devices, III-N materials/devices, and their applications such as electronics, sensors, photonics, and photovoltaics.

The topics of interest include but are not limited to:

  • Theory of III-V/III-N materials;
  • Growth of III-V/III-N materials;
  • Characterization of III-V/III-N materials;
  • III-V/III-N material-based devices (electronics, sensors, photonics, and photovoltaics, etc.).

Dr. Han Eol Lee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-V materials and devices
  • III-N materials and devices

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Published Papers (5 papers)

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Research

9 pages, 2825 KiB  
Article
AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers
by Yu-Shyan Lin and Chi-Che Lu
Micromachines 2023, 14(6), 1183; https://doi.org/10.3390/mi14061183 - 31 May 2023
Cited by 1 | Viewed by 1750
Abstract
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO2 is used to form the dielectric and passivation layers. The TiO2 film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The [...] Read more.
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO2 is used to form the dielectric and passivation layers. The TiO2 film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N2. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices)
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8 pages, 13312 KiB  
Article
Direct Shear Stress Mapping Using a Gallium Nitride LED-Based Tactile Sensor
by Nathan Dvořák, Nima Fazeli and Pei-Cheng Ku
Micromachines 2023, 14(5), 916; https://doi.org/10.3390/mi14050916 - 24 Apr 2023
Cited by 1 | Viewed by 1463
Abstract
An experiment was performed to calibrate the capability of a tactile sensor, which is based on gallium nitride (GaN) nanopillars, to measure the absolute magnitude and direction of an applied shear force without the need for any post-processing of data. The force’s magnitude [...] Read more.
An experiment was performed to calibrate the capability of a tactile sensor, which is based on gallium nitride (GaN) nanopillars, to measure the absolute magnitude and direction of an applied shear force without the need for any post-processing of data. The force’s magnitude was deduced from monitoring the nanopillars’ light emission intensity. Calibration of the tactile sensor used a commercial force/torque (F/T) sensor. Numerical simulations were carried out to translate the F/T sensor’s reading to the shear force applied to each nanopillar’s tip. The results confirmed the direct measurement of shear stress from 3.71 to 50 kPa, which is in the range of interest for completing robotic tasks such as grasping, pose estimation, and item discovery. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices)
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8 pages, 2605 KiB  
Article
Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
by Seung Heon Shin, Jae-Phil Shim, Hyunchul Jang and Jae-Hyung Jang
Micromachines 2023, 14(1), 56; https://doi.org/10.3390/mi14010056 - 25 Dec 2022
Cited by 4 | Viewed by 2565
Abstract
In this work, we successfully demonstrated In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such [...] Read more.
In this work, we successfully demonstrated In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such as VT = −0.13 V, gm,max = 949 mS/mm, subthreshold swing (SS) = 84 mV/dec, drain-induced barrier lowering (DIBL) = 89 mV/V, and Ion/Ioff ratio = 9.8 × 103 at a drain-source voltage (VDS) = 0.5 V. In addition, the device exhibited excellent high-frequency characteristics, such as fT/fmax = 261/304 GHz for the measured result and well-matched modeled fT/fmax = 258/309 GHz at VDS = 0.5 V, which is less power consumption compared to other material systems. These high-frequency characteristics are a well-balanced demonstration of fT and fmax in the mHEMT structure on a GaAs substrate. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices)
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18 pages, 4513 KiB  
Article
Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications
by Moath Alathbah
Micromachines 2023, 14(1), 2; https://doi.org/10.3390/mi14010002 - 20 Dec 2022
Viewed by 2221
Abstract
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V), and 36% [...] Read more.
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V), and 36% in ON-resistance, RON (1.52 to 0.97 to Ω·mm), as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage or reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited a VBV of (VBV > 30 V) and an IR of (IR < 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits’ applications. The paper begins with a brief outline of the basic Schottky-contact diode operation. A series resistance analysis of the diode studied in this project is discussed. The small signal equivalent circuit of the Schottky-contact diode is presented. The layout of the diodes studied is described, and their fabrication techniques are briefly mentioned. DC, RF, and low frequency C-V measurement techniques and measurements to characterize the diodes are outlined. Finally, results and discussions on the effects of multiple recesses under the Schottky-contact (anode) obtained from the I-V diode characteristics and C-V measurements, and the small signal equivalent circuit deduced from RF measurements for different diode configurations, are presented. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices)
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12 pages, 3854 KiB  
Article
Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range
by Rubén Martínez-Revuelta, Horacio I. Solís-Cisneros, Raúl Trejo-Hernández, Madaín Pérez-Patricio, Martha L. Paniagua-Chávez, Rubén Grajales-Coutiño, Jorge L. Camas-Anzueto and Carlos A. Hernández-Gutiérrez
Micromachines 2022, 13(11), 1828; https://doi.org/10.3390/mi13111828 - 26 Oct 2022
Cited by 1 | Viewed by 1893
Abstract
A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence [...] Read more.
A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-dependent mobility on the absorber layer has been studied, obtaining considerable improvements in efficiency and photocurrent density. Efficiency over the tandem solar cell theoretical limit has been reached. A current density of 52.95 mA/cm2, with an efficiency of over 85%, is determined for a PiN structure with an InGaN step-graded bandgap absorption layer and 65.44% of power conversion efficiency for the same structure considering piezoelectric polarization of fully-strained layers and interfaces with electron and hole surface recombination velocities of 10−3 cm/s. Full article
(This article belongs to the Special Issue III-V/III-N Materials and Devices)
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