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ZnO Nanomaterials-Based Optoelectronic Synaptic Devices and Applications in Neuromorphic Computation

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Intelligent Sensors".

Deadline for manuscript submissions: closed (31 December 2024) | Viewed by 1071

Special Issue Editors

School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
Interests: piezotronics; piezo-phototronics; pyro-phototronics; tribotronics; nanogenerators; tribovoltaic; self-powered sensors; surface acoustic wave devices and sensors; piezoelectric semiconductor materials, devices, and physics
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Guest Editor
School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
Interests: semiconductor sensor devices and integrated systems; microwave devices and application systems

Special Issue Information

Dear Colleagues,

ZnO is a metal-oxide semiconductor with direct wide bandgap of around 3.4 eV and an exciton binding energy of 60 meV at room temperature, possessing huge potential in UV-range optoelectronic devices. Oxygen vacancy plays a dominant role in the UV response of ZnO, since it traps the photo-generated holes and leaves the photo-generated electrons to modulate the photoconductivity of ZnO. However, the trapping and releasing processes of photo-generated holes via oxygen vacancy are usually very slow, resulting in the well-known persistent photoconductivity phenomenon in ZnO UV optoelectronic devices. Though the persistent photoconductivity, which indicates that the recovery of ZnO’s photoconductivity after UV illumination takes a very long time, should be reduced from the perspective of ZnO UV photodetector, it makes ZnO a potential candidate for developing high-performance optoelectronic synaptic devices, especially ZnO nanomaterials because of the much larger surface-to-volume ratio compared to ZnO bulk material.

Accordingly, this Special Issue, titled “ZnO nanomaterials based optoelectronic synaptic devices and applications in neuromorphic computation”, seeks to showcase research papers, short communications, and review articles that focus on (1) the influences of oxygen vacancy on ZnO and persistent photoconductivity and (2) ZnO nanomaterial-based optoelectronic synaptic devices and applications in neuromorphic computation.

Dr. Wenbo Peng
Prof. Dr. Yongning He
Guest Editors

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Keywords

  • ZnO
  • nanowire
  • nanorod
  • nanosheet
  • nanofilm
  • oxygen vacancy
  • persistent photoconductivity
  • optoelectronic synapse
  • neuromorphic computation

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Published Papers (1 paper)

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Research

16 pages, 3015 KiB  
Article
A Low-Cost Flexible Optoelectronic Synapse Based on ZnO Nanowires for Neuromorphic Computing
by Yongqing Yue, Zixia Yu, Fangpei Li, Wenbo Peng, Quanzhe Zhu and Yongning He
Sensors 2024, 24(23), 7788; https://doi.org/10.3390/s24237788 - 5 Dec 2024
Viewed by 736
Abstract
Neuromorphic computing, inspired by the brain, holds significant promise for advancing artificial intelligence. Artificial optoelectronic synapses, which can convert optical signals into electrical signals, play a crucial role in neuromorphic computing. In this study, we successfully fabricated a flexible artificial optoelectronic synapse device [...] Read more.
Neuromorphic computing, inspired by the brain, holds significant promise for advancing artificial intelligence. Artificial optoelectronic synapses, which can convert optical signals into electrical signals, play a crucial role in neuromorphic computing. In this study, we successfully fabricated a flexible artificial optoelectronic synapse device based on the ZnO/PDMS structure by utilizing the magnetron sputtering technique to deposit the ZnO film on a flexible substrate. Under UV light illumination, the device exhibits excellent synaptic plasticity, including excitatory postsynaptic current (EPSC), short-term potentiation (STP), and paired-pulse facilitation (PPF). By growing ZnO nanowires, we improved the fabrication processes and further enhanced the synaptic properties of the device, demonstrating long-term potentiation (LTP) and the transition from short-term memory (STM) to long-term memory (LTM). Additionally, the device exhibits outstanding flexibility, maintaining stable synaptic plasticity under bending conditions. This device shows broad application potential in mimicking visual systems and is expected to contribute significantly to the development of neuromorphic computing. Full article
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