Feng, Z.C.; Liu, J.; Xie, D.; Nafisa, M.T.; Zhang, C.; Wan, L.; Jiang, B.; Lin, H.-H.; Qiu, Z.-R.; Lu, W.;
et al. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy. Materials 2024, 17, 2921.
https://doi.org/10.3390/ma17122921
AMA Style
Feng ZC, Liu J, Xie D, Nafisa MT, Zhang C, Wan L, Jiang B, Lin H-H, Qiu Z-R, Lu W,
et al. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy. Materials. 2024; 17(12):2921.
https://doi.org/10.3390/ma17122921
Chicago/Turabian Style
Feng, Zhe Chuan, Jiamin Liu, Deng Xie, Manika Tun Nafisa, Chuanwei Zhang, Lingyu Wan, Beibei Jiang, Hao-Hsiung Lin, Zhi-Ren Qiu, Weijie Lu,
and et al. 2024. "Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy" Materials 17, no. 12: 2921.
https://doi.org/10.3390/ma17122921
APA Style
Feng, Z. C., Liu, J., Xie, D., Nafisa, M. T., Zhang, C., Wan, L., Jiang, B., Lin, H. -H., Qiu, Z. -R., Lu, W., Klein, B., Ferguson, I. T., & Liu, S.
(2024). Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy. Materials, 17(12), 2921.
https://doi.org/10.3390/ma17122921
