Yue, W.; Li, P.; Zhou, X.; Wang, Y.; Wu, J.; Bai, J.
Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method. Nanomaterials 2021, 11, 2009.
https://doi.org/10.3390/nano11082009
AMA Style
Yue W, Li P, Zhou X, Wang Y, Wu J, Bai J.
Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method. Nanomaterials. 2021; 11(8):2009.
https://doi.org/10.3390/nano11082009
Chicago/Turabian Style
Yue, Wenkai, Peixian Li, Xiaowei Zhou, Yanli Wang, Jinxing Wu, and Junchun Bai.
2021. "Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method" Nanomaterials 11, no. 8: 2009.
https://doi.org/10.3390/nano11082009
APA Style
Yue, W., Li, P., Zhou, X., Wang, Y., Wu, J., & Bai, J.
(2021). Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method. Nanomaterials, 11(8), 2009.
https://doi.org/10.3390/nano11082009