Article Versions Notes

Cheng L, Li Z, Zhang J, Lin X, Yang D, Chen H, Wu S, Yao S. Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes. Nanomaterials. 2021; 11(8):2070. https://doi.org/10.3390/nano11082070

Cheng, Liwen, Zhenwei Li, Jiayi Zhang, Xingyu Lin, Da Yang, Haitao Chen, Shudong Wu, and Shun Yao. 2021. "Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes" Nanomaterials 11, no. 8: 2070. https://doi.org/10.3390/nano11082070

Cheng, L., Li, Z., Zhang, J., Lin, X., Yang, D., Chen, H., Wu, S., & Yao, S. (2021). Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes. Nanomaterials, 11(8), 2070. https://doi.org/10.3390/nano11082070