Yan, S.-C.; Wu, C.-H.; Sun, C.-J.; Lin, Y.-W.; Yao, Y.-J.; Wu, Y.-C.
Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application. Nanomaterials 2022, 12, 2165.
https://doi.org/10.3390/nano12132165
AMA Style
Yan S-C, Wu C-H, Sun C-J, Lin Y-W, Yao Y-J, Wu Y-C.
Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application. Nanomaterials. 2022; 12(13):2165.
https://doi.org/10.3390/nano12132165
Chicago/Turabian Style
Yan, Siao-Cheng, Chen-Han Wu, Chong-Jhe Sun, Yi-Wen Lin, Yi-Ju Yao, and Yung-Chun Wu.
2022. "Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application" Nanomaterials 12, no. 13: 2165.
https://doi.org/10.3390/nano12132165
APA Style
Yan, S. -C., Wu, C. -H., Sun, C. -J., Lin, Y. -W., Yao, Y. -J., & Wu, Y. -C.
(2022). Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application. Nanomaterials, 12(13), 2165.
https://doi.org/10.3390/nano12132165
