Chang, T.-Y.; Wang, K.-C.; Liu, H.-Y.; Hseun, J.-H.; Peng, W.-C.; Ronchi, N.; Celano, U.; Banerjee, K.; Van Houdt, J.; Wu, T.-L.
Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory. Nanomaterials 2023, 13, 2104.
https://doi.org/10.3390/nano13142104
AMA Style
Chang T-Y, Wang K-C, Liu H-Y, Hseun J-H, Peng W-C, Ronchi N, Celano U, Banerjee K, Van Houdt J, Wu T-L.
Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory. Nanomaterials. 2023; 13(14):2104.
https://doi.org/10.3390/nano13142104
Chicago/Turabian Style
Chang, Ting-Yu, Kuan-Chi Wang, Hsien-Yang Liu, Jing-Hua Hseun, Wei-Cheng Peng, Nicolò Ronchi, Umberto Celano, Kaustuv Banerjee, Jan Van Houdt, and Tian-Li Wu.
2023. "Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory" Nanomaterials 13, no. 14: 2104.
https://doi.org/10.3390/nano13142104
APA Style
Chang, T. -Y., Wang, K. -C., Liu, H. -Y., Hseun, J. -H., Peng, W. -C., Ronchi, N., Celano, U., Banerjee, K., Van Houdt, J., & Wu, T. -L.
(2023). Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory. Nanomaterials, 13(14), 2104.
https://doi.org/10.3390/nano13142104
