Open AccessFeature PaperArticle
Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
by
Guillermo Vinuesa, Héctor García, Mireia B. González, Kristjan Kalam, Miguel Zabala, Aivar Tarre, Kaupo Kukli, Aile Tamm, Francesca Campabadal, Juan Jiménez, Helena Castán and Salvador Dueñas
Cited by 7 | Viewed by 2674
Abstract
In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO
2/Pt structures as the sign of the voltages at
[...] Read more.
In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO
2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.
Full article
►▼
Show Figures