Article Versions Notes

Jiang J, Xu H, Chen L, Yan L, Hoo J, Guo S, Zeng Y, Guo W, Ye J. Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth. Photonics. 2021; 8(5):157. https://doi.org/10.3390/photonics8050157

Jiang, Jie’an, Houqiang Xu, Li Chen, Long Yan, Jason Hoo, Shiping Guo, Yuheng Zeng, Wei Guo, and Jichun Ye. 2021. "Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth" Photonics 8, no. 5: 157. https://doi.org/10.3390/photonics8050157

Jiang, J., Xu, H., Chen, L., Yan, L., Hoo, J., Guo, S., Zeng, Y., Guo, W., & Ye, J. (2021). Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth. Photonics, 8(5), 157. https://doi.org/10.3390/photonics8050157