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Next-Generation Electronic and Optoelectronic Devices and Materials

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Electrical, Electronics and Communications Engineering".

Deadline for manuscript submissions: closed (30 April 2024) | Viewed by 1151

Special Issue Editors


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Guest Editor
Department of Applied Physics, Nicolaus Copernicus University in Toruń, 87-100 Toruń, Poland
Interests: semiconductors; optoelectronics; material characterization; materials; microelectronics and semiconductor engineering; materials science; solid-state physics; photothermal measurements

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Guest Editor
Institute of Physics, Silesian University of Technology, 44-100 Gliwice, Poland
Interests: thermal measurements; heat transport in micro- and nanoscale; scanning probe microscopy; scanning thermal microscopy; photothermal measurements; thermoelectric materials

Special Issue Information

Dear Colleagues,

The development of modern electronic and optoelectronic devices is inextricably linked to the materials used for their production. Existing solutions are constantly being improved, and new challenges are arising. An important topic is the invention of materials that can be mass-produced using inexpensive and energy-efficient production. This Special Issue aims to cover both topics—materials and devices. This Special Issue will focus on the devices' design, architecture, manufacturing, optical, electronic, and thermal properties. It also aims to discuss the current aspects of the theory, design, technology, and characterization of current and new materials. The subjects of interest will be broadband semiconductor materials and structures, thin films, hybrid and dielectric materials, and next-generation materials (such as organic semiconductors, perovskites, and low-dimensional materials).

Prof. Dr. Jacek Zakrzewski
Prof. Dr. Jerzy Bodzenta
Guest Editors

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Published Papers (1 paper)

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Research

15 pages, 3218 KiB  
Article
Aluminum-Based Plasmonic Photodetector for Sensing Applications
by Yurii Lyaschuk, Ivan Indutnyi, Viktor Myn’ko, Volodymyr Romanyuk, Iryna Mamontova, Roman Redko, Mykhailo Dusheyko, Yelizaveta Savchuk, Vasyl Tochkovyi, Oleksandr Shtykalo, Daria Kuznetsova and Sergii Mamykin
Appl. Sci. 2024, 14(11), 4546; https://doi.org/10.3390/app14114546 - 25 May 2024
Cited by 1 | Viewed by 653
Abstract
Plasmonic sensors have great potential for widespread usage. However, the prohibitive cost of noble metals restrains the wider adoption of these devices. The aim of our study is to develop a cost-effective Al-based alternative to common noble metal-based plasmonic detectors. We considered a [...] Read more.
Plasmonic sensors have great potential for widespread usage. However, the prohibitive cost of noble metals restrains the wider adoption of these devices. The aim of our study is to develop a cost-effective Al-based alternative to common noble metal-based plasmonic detectors. We considered a structure consisting of an n-type doped Si wafer with a shallow p-n junction and an overlying Al grating with a trapezoidal groove profile. The RCWA (rigorous coupled-wave analysis) method was used to numerically calculate the distribution of absorbed light energy in the plasmonic detector layers and to optimize the grating parameters. Based on the simulation results, experimental samples of plasmonic photodetectors with optimal grating parameters (period—633 nm, relief depth—50 nm, groove filling factor—0.36, and thickness of the intermediate Al layer—14 nm) were manufactured, and their properties were studied. For these samples, we obtained a polarization sensitivity value of Ip/Is = 8, an FWHM of the resonance in the photocurrent spectrum ranging from 50 to 100 nm, a sensitivity at the resonance maximum of Iph = 0.04–0.06 A/W, and an angular half-width of photocurrent resonance of Δθ = 5°, which are comparable to noble metal-based analogs. Our results may be used for creating cost-effective high-sensitivity plasmonic sensors. Full article
(This article belongs to the Special Issue Next-Generation Electronic and Optoelectronic Devices and Materials)
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