Surface Chemistry and Surface Design to Improve Biosensing by Field-Effect Transistors

A special issue of Biosensors (ISSN 2079-6374). This special issue belongs to the section "Biosensor and Bioelectronic Devices".

Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 5577

Special Issue Editors


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Guest Editor
Department of Chemical and Materials Engineering, National Central University, Taoyuan City 320317, Taiwan
Interests: thermodynamics and dynamics of biological identification systems; biochip; biosensor; biomolecule and stem cell separation and purification engineering; controlled release of biomedical materials, drugs and genes
Special Issues, Collections and Topics in MDPI journals
Department of Chemical and Materials Engineering, National Central University, Taoyuan 320317, Taiwan
Interests: biosensors; paper-based devices; surface modification and analysis; field-effect transistors; antifouling; biomarkers for disease diagnosis; aptamers; microRNAs; exosomes; ELISA
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

More than a half-century has witnessed the emergence of biosensors based on field-effect transistors as a superior tool to detect a variety of biomolecules and substances. During the recent decades, enormous time and efforts have been invested into FET biosensors to exploit them for determining numerous biomarkers (proteins, microRNAs, and so on) at ultra-low concentrations. They are therefore expected to play vital roles in diagnosis of chronic diseases as well as development of precision medicine in the future.

This Special Issue welcomes high-quality publications including review, perspective, communication, and research articles related to recent advances in sensing technology by FETs, especially studies to improve FET-based biosensors for biomedical applications. The potential themes cover, but are not restricted to the following:

- materials for FETs

- nano-structured transducers

- probe design and synthesis

- transducer fabrication techniques

- surface modification methods

- antifouling functions

- sensing biomarkers of pandemic

- improving sensitivity and detection limit

- applications in biologics manufacturing (biomanufacturing)

Prof. Dr. Wen-Yih Chen 
Dr. Cao-An Vu
Guest Editors

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Published Papers (1 paper)

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Review

23 pages, 4941 KiB  
Review
Advancement and Challenges of Biosensing Using Field Effect Transistors
by Gokuraju Thriveni and Kaustab Ghosh
Biosensors 2022, 12(8), 647; https://doi.org/10.3390/bios12080647 - 17 Aug 2022
Cited by 22 | Viewed by 4337
Abstract
Field-effect transistors (FETs) have become eminent electronic devices for biosensing applications owing to their high sensitivity, faster response and availability of advanced fabrication techniques for their production. The device physics of this sensor is now well understood due to the emergence of several [...] Read more.
Field-effect transistors (FETs) have become eminent electronic devices for biosensing applications owing to their high sensitivity, faster response and availability of advanced fabrication techniques for their production. The device physics of this sensor is now well understood due to the emergence of several numerical modelling and simulation papers over the years. The pace of advancement along with the knowhow of theoretical concepts proved to be highly effective in detecting deadly pathogens, especially the SARS-CoV-2 spike protein of the coronavirus with the onset of the (coronavirus disease of 2019) COVID-19 pandemic. However, the advancement in the sensing system is also accompanied by various hurdles that degrade the performance. In this review, we have explored all these challenges and how these are tackled with innovative approaches, techniques and device modifications that have also raised the detection sensitivity and specificity. The functional materials of the device are also structurally modified towards improving the surface area and minimizing power dissipation for developing miniaturized microarrays applicable in ultra large scale integration (ULSI) technology. Several theoretical models and simulations have also been carried out in this domain which have given a deeper insight on the electron transport mechanism in these devices and provided the direction for optimizing performance. Full article
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